|
|
MOSFET HIGH POWER_NEW
- IPA60R099P7XKSA1
- Infineon Technologies
-
1:
₩6,175.8
-
642재고 상태
|
Mouser 부품 번호
726-IPA60R099P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
642재고 상태
|
|
|
₩6,175.8
|
|
|
₩3,036.8
|
|
|
₩2,876.2
|
|
|
₩2,744.8
|
|
|
₩2,204.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPA60R180P7SXKSA1
- Infineon Technologies
-
1:
₩3,007.6
-
1,593재고 상태
|
Mouser 부품 번호
726-IPA60R180P7SXKSA
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
1,593재고 상태
|
|
|
₩3,007.6
|
|
|
₩1,452.7
|
|
|
₩1,281.9
|
|
|
₩1,035.1
|
|
|
보기
|
|
|
₩877.5
|
|
|
₩829.3
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R180P7XKSA1
- Infineon Technologies
-
1:
₩3,971.2
-
862재고 상태
|
Mouser 부품 번호
726-IPA60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
862재고 상태
|
|
|
₩3,971.2
|
|
|
₩1,971
|
|
|
₩1,795.8
|
|
|
₩1,426.4
|
|
|
보기
|
|
|
₩1,224.9
|
|
|
₩1,220.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
₩2,774
-
263재고 상태
-
12,500예상 2026-04-16
|
Mouser 부품 번호
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
263재고 상태
12,500예상 2026-04-16
|
|
|
₩2,774
|
|
|
₩1,766.6
|
|
|
₩1,181.1
|
|
|
₩946.1
|
|
|
₩864.3
|
|
|
₩719.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
₩8,468
-
307재고 상태
-
3,000예상 2026-09-03
|
Mouser 부품 번호
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
307재고 상태
3,000예상 2026-09-03
|
|
|
₩8,468
|
|
|
₩6,394.8
|
|
|
₩5,183
|
|
|
₩4,599
|
|
|
₩3,942
|
|
|
₩3,942
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R120P7XKSA1
- Infineon Technologies
-
1:
₩4,336.2
-
648재고 상태
|
Mouser 부품 번호
726-IPP60R120P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
648재고 상태
|
|
|
₩4,336.2
|
|
|
₩2,686.4
|
|
|
₩2,438.2
|
|
|
₩1,971
|
|
|
₩1,795.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R120P7XKSA1
- Infineon Technologies
-
1:
₩4,073.4
-
217재고 상태
-
240예상 2026-02-16
|
Mouser 부품 번호
726-IPW60R120P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
217재고 상태
240예상 2026-02-16
|
|
|
₩4,073.4
|
|
|
₩3,985.8
|
|
|
₩3,416.4
|
|
|
₩2,949.2
|
|
|
₩2,292.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
-
1:
₩14,687.6
-
130재고 상태
|
Mouser 부품 번호
726-IPZA60R037P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
130재고 상태
|
|
|
₩14,687.6
|
|
|
₩14,351.8
|
|
|
₩8,351.2
|
|
|
₩7,416.8
|
|
|
보기
|
|
|
₩7,402.2
|
|
|
₩7,037.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R080P7XKSA1
- Infineon Technologies
-
1:
₩8,847.6
-
174재고 상태
|
Mouser 부품 번호
726-IPZA60R080P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
174재고 상태
|
|
|
₩8,847.6
|
|
|
₩5,299.8
|
|
|
₩4,423.8
|
|
|
₩3,825.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
₩4,978.6
-
42,720주문 중
|
Mouser 부품 번호
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
42,720주문 중
주문 중:
11,040 예상 2026-04-16
17,760 예상 2026-10-01
13,920 예상 2027-01-28
|
|
|
₩4,978.6
|
|
|
₩2,715.6
|
|
|
₩2,219.2
|
|
|
₩1,708.2
|
|
|
₩1,649.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R060P7XKSA1
- Infineon Technologies
-
1:
₩6,832.8
-
2,947주문 중
|
Mouser 부품 번호
726-IPP60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,947주문 중
|
|
|
₩6,832.8
|
|
|
₩4,000.4
|
|
|
₩3,810.6
|
|
|
₩3,153.6
|
|
|
₩3,109.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
₩6,920.4
-
5,500주문 중
|
Mouser 부품 번호
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
5,500주문 중
주문 중:
1,000 예상 2026-03-25
4,500 예상 2026-04-09
|
|
|
₩6,920.4
|
|
|
₩3,489.4
|
|
|
₩3,255.8
|
|
|
₩2,686.4
|
|
|
₩2,584.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
₩10,132.4
-
906예상 2026-07-23
|
Mouser 부품 번호
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
906예상 2026-07-23
|
|
|
₩10,132.4
|
|
|
₩5,840
|
|
|
₩4,891
|
|
|
₩4,307
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
₩8,657.8
-
1,601예상 2026-05-14
|
Mouser 부품 번호
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,601예상 2026-05-14
|
|
|
₩8,657.8
|
|
|
₩6,044.4
|
|
|
₩4,891
|
|
|
₩4,336.2
|
|
|
₩3,723
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R060P7XKSA1
- Infineon Technologies
-
1:
₩10,307.6
-
227예상 2026-07-03
|
Mouser 부품 번호
726-IPZA60R060P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
227예상 2026-07-03
|
|
|
₩10,307.6
|
|
|
₩6,073.6
|
|
|
₩5,153.8
|
|
|
₩4,380
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
₩11,884.4
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 12 주
|
|
|
₩11,884.4
|
|
|
₩7,008
|
|
|
₩5,898.4
|
|
|
₩5,197.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|