|
|
MOSFET HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
₩8,223.2
-
2,248재고 상태
|
Mouser 부품 번호
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,248재고 상태
|
|
|
₩8,223.2
|
|
|
₩4,286.4
|
|
|
₩3,906.4
|
|
|
₩3,268
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R085P7AUMA1
- Infineon Technologies
-
1:
₩8,846.4
-
92재고 상태
|
Mouser 부품 번호
726-IPL60R085P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
92재고 상태
|
|
|
₩8,846.4
|
|
|
₩5,912.8
|
|
|
₩4,240.8
|
|
|
₩3,830.4
|
|
|
₩3,572
|
|
최소: 1
배수: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
73 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 40 C
|
+ 150 C
|
154 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
₩11,916.8
-
3,561재고 상태
|
Mouser 부품 번호
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3,561재고 상태
|
|
|
₩11,916.8
|
|
|
₩7,463.2
|
|
|
₩5,882.4
|
|
|
₩5,669.6
|
|
|
₩5,335.2
|
|
|
₩5,304.8
|
|
최소: 1
배수: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
₩6,368.8
-
23,213재고 상태
-
9,360예상 2026-07-02
|
Mouser 부품 번호
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
23,213재고 상태
9,360예상 2026-07-02
|
|
|
₩6,368.8
|
|
|
₩4,164.8
|
|
|
₩3,100.8
|
|
|
₩2,599.2
|
|
|
보기
|
|
|
₩2,416.8
|
|
|
₩2,264.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
₩9,363.2
-
15,903재고 상태
-
5,000주문 중
|
Mouser 부품 번호
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
15,903재고 상태
5,000주문 중
주문 중:
2,500 예상 2026-07-02
2,500 예상 2026-11-12
|
|
|
₩9,363.2
|
|
|
₩6,140.8
|
|
|
₩4,514.4
|
|
|
₩4,012.8
|
|
|
₩3,556.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
₩15,580
-
4,158재고 상태
-
2,640예상 2026-07-02
|
Mouser 부품 번호
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4,158재고 상태
2,640예상 2026-07-02
|
|
|
₩15,580
|
|
|
₩10,640
|
|
|
₩8,770.4
|
|
|
₩7,812.8
|
|
|
₩7,311.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
₩11,187.2
-
1,446재고 상태
|
Mouser 부품 번호
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,446재고 상태
|
|
|
₩11,187.2
|
|
|
₩7,326.4
|
|
|
₩5,396
|
|
|
₩4,788
|
|
|
₩4,256
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R080P7ATMA1
- Infineon Technologies
-
1:
₩9,287.2
-
1,337재고 상태
|
Mouser 부품 번호
726-IPB60R080P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,337재고 상태
|
|
|
₩9,287.2
|
|
|
₩6,080
|
|
|
₩4,468.8
|
|
|
₩3,982.4
|
|
|
₩3,526.4
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
₩8,481.6
-
1,212재고 상태
|
Mouser 부품 번호
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,212재고 상태
|
|
|
₩8,481.6
|
|
|
₩5,548
|
|
|
₩4,134.4
|
|
|
₩3,465.6
|
|
|
₩3,222.4
|
|
|
₩3,009.6
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
₩6,961.6
-
5,301재고 상태
|
Mouser 부품 번호
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
5,301재고 상태
|
|
|
₩6,961.6
|
|
|
₩4,560
|
|
|
₩3,404.8
|
|
|
₩2,842.4
|
|
|
₩2,644.8
|
|
|
₩2,477.6
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
₩5,183.2
-
2,803재고 상태
|
Mouser 부품 번호
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,803재고 상태
|
|
|
₩5,183.2
|
|
|
₩3,359.2
|
|
|
₩2,325.6
|
|
|
₩1,930.4
|
|
|
₩1,793.6
|
|
|
₩1,687.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
₩6,961.6
-
2,013재고 상태
|
Mouser 부품 번호
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,013재고 상태
|
|
|
₩6,961.6
|
|
|
₩4,560
|
|
|
₩3,389.6
|
|
|
₩2,842.4
|
|
|
보기
|
|
|
₩2,644.8
|
|
|
₩2,477.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
₩12,722.4
-
596재고 상태
-
2,000예상 2026-07-16
|
Mouser 부품 번호
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
596재고 상태
2,000예상 2026-07-16
|
|
|
₩12,722.4
|
|
|
₩8,512
|
|
|
₩6,840
|
|
|
₩6,080
|
|
|
₩5,396
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
₩4,286.4
-
2,304재고 상태
-
12,500예상 2026-10-29
|
Mouser 부품 번호
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,304재고 상태
12,500예상 2026-10-29
|
|
|
₩4,286.4
|
|
|
₩2,644.8
|
|
|
₩1,808.8
|
|
|
₩1,477.4
|
|
|
₩1,387.8
|
|
|
₩1,316.3
|
|
최소: 1
배수: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
₩3,450.4
-
11,771재고 상태
-
7,500예상 2026-12-03
|
Mouser 부품 번호
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
11,771재고 상태
7,500예상 2026-12-03
|
|
|
₩3,450.4
|
|
|
₩2,188.8
|
|
|
₩1,477.4
|
|
|
₩1,197.8
|
|
|
₩1,003.2
|
|
|
보기
|
|
|
₩1,073.1
|
|
|
₩953
|
|
최소: 1
배수: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
₩7,448
-
2,316재고 상태
|
Mouser 부품 번호
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,316재고 상태
|
|
|
₩7,448
|
|
|
₩4,970.4
|
|
|
₩3,572
|
|
|
₩3,116
|
|
|
₩2,903.2
|
|
최소: 1
배수: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
₩6,824.8
-
4,724재고 상태
-
6,000예상 2026-12-17
|
Mouser 부품 번호
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4,724재고 상태
6,000예상 2026-12-17
|
|
|
₩6,824.8
|
|
|
₩4,468.8
|
|
|
₩3,328.8
|
|
|
₩2,781.6
|
|
|
₩2,584
|
|
|
₩2,432
|
|
최소: 1
배수: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
₩5,076.8
-
4,285재고 상태
|
Mouser 부품 번호
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4,285재고 상태
|
|
|
₩5,076.8
|
|
|
₩3,298.4
|
|
|
₩2,264.8
|
|
|
₩1,900
|
|
|
₩1,763.2
|
|
|
₩1,656.8
|
|
최소: 1
배수: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
₩4,712
-
2,388재고 상태
|
Mouser 부품 번호
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,388재고 상태
|
|
|
₩4,712
|
|
|
₩3,055.2
|
|
|
₩2,112.8
|
|
|
₩1,763.2
|
|
|
보기
|
|
|
₩1,626.4
|
|
|
₩1,535.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
₩21,492.8
-
441재고 상태
|
Mouser 부품 번호
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
441재고 상태
|
|
|
₩21,492.8
|
|
|
₩14,075.2
|
|
|
₩12,084
|
|
|
₩10,655.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
- 20 V, 20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
₩13,102.4
-
87재고 상태
-
240예상 2026-08-06
|
Mouser 부품 번호
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
87재고 상태
240예상 2026-08-06
|
|
|
₩13,102.4
|
|
|
₩9,211.2
|
|
|
₩7,463.2
|
|
|
₩6,627.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
₩10,928.8
-
3,280재고 상태
-
240예상 2026-07-02
|
Mouser 부품 번호
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3,280재고 상태
240예상 2026-07-02
|
|
|
₩10,928.8
|
|
|
₩7,311.2
|
|
|
₩5,882.4
|
|
|
₩5,228.8
|
|
|
₩4,636
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
₩9,484.8
-
723재고 상태
|
Mouser 부품 번호
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
723재고 상태
|
|
|
₩9,484.8
|
|
|
₩6,216.8
|
|
|
₩4,575.2
|
|
|
₩4,058.4
|
|
|
₩3,602.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R160P7XKSA1
- Infineon Technologies
-
1:
₩5,304.8
-
299재고 상태
|
Mouser 부품 번호
726-IPA60R160P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
299재고 상태
|
|
|
₩5,304.8
|
|
|
₩3,450.4
|
|
|
₩2,416.8
|
|
|
₩2,021.6
|
|
|
보기
|
|
|
₩1,884.8
|
|
|
₩1,763.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
374 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
₩4,377.6
-
778재고 상태
|
Mouser 부품 번호
726-IPAN60R180P7SXKS
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
778재고 상태
|
|
|
₩4,377.6
|
|
|
₩2,796.8
|
|
|
₩1,900
|
|
|
₩1,611.2
|
|
|
보기
|
|
|
₩1,436.4
|
|
|
₩1,358.9
|
|
|
₩1,290.5
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|