|
|
MOSFET HIGH POWER_NEW
- IPW60R031CFD7XKSA1
- Infineon Technologies
-
1:
₩14,731.4
-
806재고 상태
|
Mouser 부품 번호
726-IPW60R031CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
806재고 상태
|
|
|
₩14,731.4
|
|
|
₩8,351.2
|
|
|
₩8,336.6
|
|
|
₩7,256.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
63 A
|
26 mOhms
|
- 20 V, 20 V
|
3.5 V
|
141 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R040CFD7XKSA1
- Infineon Technologies
-
1:
₩12,585.2
-
847재고 상태
|
Mouser 부품 번호
726-IPW60R040CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
847재고 상태
|
|
|
₩12,585.2
|
|
|
₩6,832.8
|
|
|
₩6,219.6
|
|
|
₩6,205
|
|
|
보기
|
|
|
₩5,956.8
|
|
|
₩5,723.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3.5 V
|
109 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R090CFD7XKSA1
- Infineon Technologies
-
1:
₩7,621.2
-
732재고 상태
|
Mouser 부품 번호
726-IPW60R090CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
732재고 상태
|
|
|
₩7,621.2
|
|
|
₩4,599
|
|
|
₩4,584.4
|
|
|
₩3,854.4
|
|
|
₩3,212
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
90 mOhms
|
- 20 V, 20 V
|
3.5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
₩13,023.2
-
316재고 상태
|
Mouser 부품 번호
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
316재고 상태
|
|
|
₩13,023.2
|
|
|
₩7,650.4
|
|
|
₩6,482.4
|
|
|
₩6,000.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R105CFD7ATMA1
- Infineon Technologies
-
1:
₩6,920.4
-
8재고 상태
|
Mouser 부품 번호
726-IPB60R105CFD7ATM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
8재고 상태
|
|
|
₩6,920.4
|
|
|
₩4,584.4
|
|
|
₩3,255.8
|
|
|
₩3,051.4
|
|
|
₩2,496.6
|
|
|
₩2,482
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
4.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET LOW POWER_NEW
- IPP60R280CFD7XKSA1
- Infineon Technologies
-
1:
₩4,102.6
-
212재고 상태
-
500예상 2026-03-02
|
Mouser 부품 번호
726-IPP60R280CFD7XKS
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
212재고 상태
500예상 2026-03-02
|
|
|
₩4,102.6
|
|
|
₩4,088
|
|
|
₩2,044
|
|
|
₩1,868.8
|
|
|
보기
|
|
|
₩1,664.4
|
|
|
₩1,290.6
|
|
|
₩1,255.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R125CFD7XKSA1
- Infineon Technologies
-
1:
₩5,562.6
-
218재고 상태
-
500예상 2026-02-24
|
Mouser 부품 번호
726-IPA60R125CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
218재고 상태
500예상 2026-02-24
|
|
|
₩5,562.6
|
|
|
₩2,555
|
|
|
₩2,525.8
|
|
|
₩2,452.8
|
|
|
₩2,233.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPA60R280CFD7XKSA1
- Infineon Technologies
-
1:
₩4,058.8
-
358재고 상태
|
Mouser 부품 번호
726-IPA60R280CFD7XKS
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
358재고 상태
|
|
|
₩4,058.8
|
|
|
₩2,014.8
|
|
|
₩1,825
|
|
|
₩1,460
|
|
|
₩1,255.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R115CFD7AUMA1
- Infineon Technologies
-
1:
₩6,438.6
-
490재고 상태
|
Mouser 부품 번호
726-IPL60R115CFD7AUM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
490재고 상태
|
|
|
₩6,438.6
|
|
|
₩4,263.2
|
|
|
₩3,022.2
|
|
|
₩2,788.6
|
|
|
₩2,584.2
|
|
|
₩2,263
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
115 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 40 C
|
+ 150 C
|
124 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R145CFD7XKSA1
- Infineon Technologies
-
1:
₩5,606.4
-
25재고 상태
-
500예상 2026-09-03
|
Mouser 부품 번호
726-IPP60R145CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
25재고 상태
500예상 2026-09-03
|
|
|
₩5,606.4
|
|
|
₩3,299.6
|
|
|
₩2,496.6
|
|
|
₩2,014.8
|
|
|
보기
|
|
|
₩1,854.2
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP65R041CFD7XKSA1
- Infineon Technologies
-
1:
₩11,665.4
-
318재고 상태
|
Mouser 부품 번호
726-IPP65R041CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
318재고 상태
|
|
|
₩11,665.4
|
|
|
₩5,723.2
|
|
|
₩5,197.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
41 mOhms
|
- 20 V, 20 V
|
4.5 V
|
102 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
₩9,621.4
-
151재고 상태
|
Mouser 부품 번호
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
151재고 상태
|
|
|
₩9,621.4
|
|
|
₩5,153.8
|
|
|
₩4,715.8
|
|
|
₩4,015
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R024CFD7XKSA1
- Infineon Technologies
-
1:
₩19,549.4
-
178재고 상태
-
240예상 2026-02-16
|
Mouser 부품 번호
726-IPW60R024CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
178재고 상태
240예상 2026-02-16
|
|
|
₩19,549.4
|
|
|
₩11,753
|
|
|
₩10,176.2
|
|
|
₩10,161.6
|
|
|
₩9,825.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
77 A
|
24 mOhms
|
- 20 V, 20 V
|
4 V
|
183 nC
|
- 55 C
|
+ 150 C
|
320 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R125CFD7XKSA1
- Infineon Technologies
-
1:
₩7,154
-
298재고 상태
|
Mouser 부품 번호
726-IPW60R125CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
298재고 상태
|
|
|
₩7,154
|
|
|
₩4,745
|
|
|
₩3,766.8
|
|
|
₩3,343.4
|
|
|
보기
|
|
|
₩2,861.6
|
|
|
₩2,701
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW65R029CFD7XKSA1
- Infineon Technologies
-
1:
₩16,206
-
136재고 상태
|
Mouser 부품 번호
726-IPW65R029CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
136재고 상태
|
|
|
₩16,206
|
|
|
₩10,380.6
|
|
|
₩8,876.8
|
|
|
₩8,672.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R145CFD7ATMA1
- Infineon Technologies
-
1:
₩5,577.2
-
73재고 상태
-
NRND
|
Mouser 부품 번호
726-IPB60R145CFD7ATM
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
73재고 상태
|
|
|
₩5,577.2
|
|
|
₩3,664.6
|
|
|
₩2,569.6
|
|
|
₩2,277.6
|
|
|
₩1,941.8
|
|
|
₩1,854.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
4.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R145CFD7XKSA1
- Infineon Technologies
-
1:
₩6,438.6
-
15재고 상태
-
NRND
|
Mouser 부품 번호
726-IPW60R145CFD7XKS
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
15재고 상태
|
|
|
₩6,438.6
|
|
|
₩6,205
|
|
|
₩3,416.4
|
|
|
₩2,949.2
|
|
|
보기
|
|
|
₩2,847
|
|
|
₩2,336
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R125CFD7ATMA1
- Infineon Technologies
-
1:
₩6,292.6
-
38재고 상태
-
수명 종료
|
Mouser 부품 번호
726-IPB60R125CFD7ATM
수명 종료
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
38재고 상태
|
|
|
₩6,292.6
|
|
|
₩6,219.6
|
|
|
₩4,029.6
|
|
|
₩3,883.6
|
|
|
₩2,233.8
|
|
|
₩2,175.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
4.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R035CFD7XTMA1
- Infineon Technologies
-
1:
₩13,709.4
-
4,000예상 2026-08-27
|
Mouser 부품 번호
726-IPT60R035CFD7XTM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4,000예상 2026-08-27
|
|
|
₩13,709.4
|
|
|
₩9,402.4
|
|
|
₩7,577.4
|
|
|
₩7,124.8
|
|
|
₩6,175.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
67 A
|
35 mOhms
|
- 20 V, 20 V
|
4 V
|
109 nC
|
- 55 C
|
+ 150 C
|
351 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R095CFD7AUMA1
- Infineon Technologies
-
1:
₩7,314.6
-
2,999예상 2026-03-19
|
Mouser 부품 번호
726-IPL60R095CFD7AUM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,999예상 2026-03-19
|
|
|
₩7,314.6
|
|
|
₩4,861.8
|
|
|
₩3,708.4
|
|
|
₩3,387.2
|
|
|
₩3,285
|
|
|
₩2,774
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
95 mOhms
|
- 20 V, 20 V
|
3.5 V
|
51 nC
|
- 40 C
|
+ 150 C
|
147 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R160CFD7AUMA1
- Infineon Technologies
-
1:
₩3,708.4
-
2,990예상 2026-08-20
|
Mouser 부품 번호
726-IPL60R160CFD7AUM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,990예상 2026-08-20
|
|
|
₩3,708.4
|
|
|
₩3,051.4
|
|
|
₩2,409
|
|
|
₩2,117
|
|
|
₩1,708.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
160 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 40 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R170CFD7XKSA1
- Infineon Technologies
-
1:
₩4,715.8
-
1,000주문 중
|
Mouser 부품 번호
726-IPA60R170CFD7XKS
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,000주문 중
주문 중:
500 예상 2026-03-02
500 예상 2026-03-05
|
|
|
₩4,715.8
|
|
|
₩3,051.4
|
|
|
₩2,248.4
|
|
|
₩1,883.4
|
|
|
보기
|
|
|
₩1,606
|
|
|
₩1,533
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R105CFD7XKSA1
- Infineon Technologies
-
500:
₩2,598.8
-
비재고 리드 타임 8 주
-
NRND
|
Mouser 부품 번호
726-IPP60R105CFD7XKS
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 8 주
|
|
|
₩2,598.8
|
|
|
₩2,482
|
|
최소: 500
배수: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R170CFD7XKSA1
- Infineon Technologies
-
1:
₩5,767
-
비재고 리드 타임 8 주
-
NRND
|
Mouser 부품 번호
726-IPW60R170CFD7XKS
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 8 주
|
|
|
₩5,767
|
|
|
₩3,781.4
|
|
|
₩2,774
|
|
|
₩2,467.4
|
|
|
보기
|
|
|
₩2,117
|
|
|
₩1,985.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R125CFD7XTMA1
- Infineon Technologies
-
1:
₩5,854.6
-
리드 타임 19 주
|
Mouser 부품 번호
726-IPT60R125CFD7XTM
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
리드 타임 19 주
|
|
|
₩5,854.6
|
|
|
₩3,854.4
|
|
|
₩2,715.6
|
|
|
₩2,438.2
|
|
|
₩2,379.8
|
|
|
₩1,971
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
125 mOhms
|
- 20 V, 20 V
|
4 V
|
8 nC
|
- 55 C
|
+ 150 C
|
127 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|