결과: 50
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
Infineon Technologies MOSFET HIGH POWER_NEW 831재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 70 mOhms - 20 V, 20 V 4.5 V 67 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,354재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 A 105 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 150 C 140 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,364재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms - 20 V, 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 2,555재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 44 A 55 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 150 C 236 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 3,402재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,000재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms - 20 V, 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 828재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,917재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms - 20 V, 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 272재고 상태
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,433재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 360 mOhms - 20 V, 20 V 4.5 V 14 nC - 55 C + 150 C 43 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,468재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 18 A 140 mOhms - 20 V, 20 V 3.5 V 35 nC - 40 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 778재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,199재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,983재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 4.5 V 79 nC - 55 C + 150 C 178 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 3,816재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 76 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 465재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 240재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 191재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 840재고 상태
2,000예상 2026-03-02
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 4 V 107 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 4,315재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,029재고 상태
3,000예상 2026-06-11
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms - 20 V, 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,784재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms - 20 V, 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,087재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 740재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms - 20 V, 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 450재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 101 A 18 mOhms - 20 V, 20 V 3.5 V 251 nC - 55 C + 150 C 416 W Enhancement Tube