|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
- NTHL025N065SC1
- onsemi
-
1:
₩22,571.6
-
1,292재고 상태
|
Mouser 부품 번호
863-NTHL025N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
|
|
1,292재고 상태
|
|
|
₩22,571.6
|
|
|
₩18,775.6
|
|
|
₩18,323
|
|
|
₩17,052.8
|
|
|
₩16,892.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
99 A
|
28.5 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
164 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L
- NTHL060N065SC1
- onsemi
-
1:
₩13,782.4
-
569재고 상태
|
Mouser 부품 번호
863-NTHL060N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L
|
|
569재고 상태
|
|
|
₩13,782.4
|
|
|
₩9,344
|
|
|
₩8,307.4
|
|
|
₩8,292.8
|
|
|
보기
|
|
|
₩7,986.2
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
- NTH4L060N065SC1
- onsemi
-
1:
₩12,322.4
-
430재고 상태
|
Mouser 부품 번호
863-NTH4L060N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
|
|
430재고 상태
|
|
|
₩12,322.4
|
|
|
₩9,066.6
|
|
|
₩8,818.4
|
|
|
₩8,511.8
|
|
|
보기
|
|
|
₩8,482.6
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
70 mOhms
|
- 18 V, + 18 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
- NTHL045N065SC1
- onsemi
-
1:
₩19,914.4
-
1,824재고 상태
|
Mouser 부품 번호
863-NTHL045N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
|
|
1,824재고 상태
|
|
|
₩19,914.4
|
|
|
₩13,271.4
|
|
|
₩10,074
|
|
|
₩10,059.4
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
66 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
291 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
- NTBG015N065SC1
- onsemi
-
1:
₩34,996.2
-
3,923재고 상태
|
Mouser 부품 번호
863-NTBG015N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
|
|
3,923재고 상태
|
|
|
₩34,996.2
|
|
|
₩30,587
|
|
|
₩30,119.8
|
|
|
₩25,666.8
|
|
|
₩25,433.2
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
145 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
- NTH4L040N120SC1
- onsemi
-
1:
₩25,798.2
-
1,511재고 상태
|
Mouser 부품 번호
863-NTH4L040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
|
|
1,511재고 상태
|
|
|
₩25,798.2
|
|
|
₩19,724.6
|
|
|
₩18,644.2
|
|
|
₩18,629.6
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
58 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
- NTBG040N120SC1
- onsemi
-
1:
₩26,688.8
-
1,014재고 상태
|
Mouser 부품 번호
863-NTBG040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
|
|
1,014재고 상태
|
|
|
₩26,688.8
|
|
|
₩22,527.8
|
|
|
₩22,308.8
|
|
|
₩20,177.2
|
|
|
₩19,403.4
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
60 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
- NTBG160N120SC1
- onsemi
-
1:
₩9,971.8
-
2,060재고 상태
|
Mouser 부품 번호
863-NTBG160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
|
|
2,060재고 상태
|
|
|
₩9,971.8
|
|
|
₩8,088.4
|
|
|
₩7,270.8
|
|
|
₩6,234.2
|
|
|
₩6,102.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
19.5 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
33.8 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
- NTH4L160N120SC1
- onsemi
-
1:
₩9,796.6
-
2,176재고 상태
|
Mouser 부품 번호
863-NTH4L160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
|
|
2,176재고 상태
|
|
|
₩9,796.6
|
|
|
₩6,964.2
|
|
|
₩6,716
|
|
|
₩6,438.6
|
|
|
보기
|
|
|
₩6,351
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
17.3 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
34 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
- NTBG080N120SC1
- onsemi
-
1:
₩14,979.6
-
686재고 상태
|
Mouser 부품 번호
863-NTBG080N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
|
|
686재고 상태
|
|
|
₩14,979.6
|
|
|
₩12,293.2
|
|
|
₩11,490.2
|
|
|
₩10,804
|
|
|
₩9,694.4
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
110 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
179 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 60MOHM 900V
- NTHL060N090SC1
- onsemi
-
1:
₩14,541.6
-
1,230재고 상태
|
Mouser 부품 번호
863-NTHL060N090SC1
|
onsemi
|
SiC MOSFET 60MOHM 900V
|
|
1,230재고 상태
|
|
|
₩14,541.6
|
|
|
₩10,760.2
|
|
|
₩10,190.8
|
|
|
₩9,840.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
46 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
87 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 20MOHM 900V
- NTBG020N090SC1
- onsemi
-
1:
₩37,945.4
-
1,861재고 상태
|
Mouser 부품 번호
863-NTBG020N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 20MOHM 900V
|
|
1,861재고 상태
|
|
|
₩37,945.4
|
|
|
₩31,623.6
|
|
|
₩30,572.4
|
|
|
₩29,229.2
|
|
|
₩27,185.2
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
112 A
|
28 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
200 nC
|
- 55 C
|
+ 175 C
|
477 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
- NTH4L020N120SC1
- onsemi
-
1:
₩42,486
-
257재고 상태
|
Mouser 부품 번호
863-NTH4L020N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
|
|
257재고 상태
|
|
|
₩42,486
|
|
|
₩35,069.2
|
|
|
₩34,981.6
|
|
|
₩34,967
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
102 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
220 nC
|
- 55 C
|
+ 175 C
|
510 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
- NTH4L045N065SC1
- onsemi
-
1:
₩14,833.6
-
1,595재고 상태
|
Mouser 부품 번호
863-NTH4L045N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
|
|
1,595재고 상태
|
|
|
₩14,833.6
|
|
|
₩11,373.4
|
|
|
₩10,628.8
|
|
|
₩10,614.2
|
|
|
보기
|
|
|
₩10,336.8
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
- NTH4L060N090SC1
- onsemi
-
1:
₩14,191.2
-
314재고 상태
|
Mouser 부품 번호
863-NTH4L060N090SC1
|
onsemi
|
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
|
|
314재고 상태
|
|
|
₩14,191.2
|
|
|
₩10,774.8
|
|
|
₩10,526.6
|
|
|
₩10,220
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
900 V
|
46 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
87 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 60MOHM 900V
- NTBG060N090SC1
- onsemi
-
1:
₩15,344.6
-
1,276재고 상태
|
Mouser 부품 번호
863-NTBG060N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 60MOHM 900V
|
|
1,276재고 상태
|
|
|
₩15,344.6
|
|
|
₩12,702
|
|
|
₩11,665.4
|
|
|
₩10,307.6
|
|
|
₩10,307.6
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
44 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
88 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
- NTBG045N065SC1
- onsemi
-
1:
₩19,257.4
-
828재고 상태
|
Mouser 부품 번호
863-NTBG045N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
|
|
828재고 상태
|
|
|
₩19,257.4
|
|
|
₩12,760.4
|
|
|
₩11,621.6
|
|
|
₩11,183.6
|
|
|
₩10,044.8
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
62 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
121 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 20MW 1200V
- NTBG020N120SC1
- onsemi
-
1:
₩51,465
-
1,471재고 상태
|
Mouser 부품 번호
863-NTBG020N120SC1
|
onsemi
|
SiC MOSFET SIC MOS 20MW 1200V
|
|
1,471재고 상태
|
|
|
₩51,465
|
|
|
₩42,763.4
|
|
|
₩42,734.2
|
|
|
₩40,164.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
98 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
220 nC
|
- 55 C
|
+ 175 C
|
468 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 20MW 1200V
- NTHL020N120SC1
- onsemi
-
1:
₩44,865.8
-
603재고 상태
|
Mouser 부품 번호
863-NTHL020N120SC1
|
onsemi
|
SiC MOSFET 20MW 1200V
|
|
603재고 상태
|
|
|
₩44,865.8
|
|
|
₩34,923.2
|
|
|
₩34,908.6
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
103 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
203 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
- NTH4L015N065SC1
- onsemi
-
1:
₩39,288.6
-
212재고 상태
|
Mouser 부품 번호
863-NTH4L015N065SC1
|
onsemi
|
SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
|
|
212재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
142 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
- NTH4L080N120SC1
- onsemi
-
1:
₩17,739
-
253재고 상태
|
Mouser 부품 번호
863-NTH4L080N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
|
|
253재고 상태
|
|
|
₩17,739
|
|
|
₩10,672.6
|
|
|
₩9,986.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
110 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
170 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 20MOHM 900V
- NTHL020N090SC1
- onsemi
-
1:
₩35,186
-
370재고 상태
|
Mouser 부품 번호
863-NTHL020N090SC1
|
onsemi
|
SiC MOSFET 20MOHM 900V
|
|
370재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
118 A
|
28 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
196 nC
|
- 55 C
|
+ 175 C
|
503 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
- NTHL040N120SC1
- onsemi
-
1:
₩29,521.2
-
635재고 상태
|
Mouser 부품 번호
863-NTHL040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
|
|
635재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
60 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
- NTHL160N120SC1
- onsemi
-
1:
₩8,701.6
-
990재고 상태
|
Mouser 부품 번호
863-NTHL160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
|
|
990재고 상태
|
|
|
₩8,701.6
|
|
|
₩6,759.8
|
|
|
₩6,540.8
|
|
|
₩6,248.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
17 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
34 nC
|
- 55 C
|
+ 175 C
|
119 W
|
Enhancement
|
EliteSiC
|
|