|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
₩33,901.2
-
664재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R012M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
664재고 상태
|
|
|
₩33,901.2
|
|
|
₩27,740
|
|
|
₩24,498.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
₩26,367.6
-
706재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R017M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
706재고 상태
|
|
|
₩26,367.6
|
|
|
₩21,111.6
|
|
|
₩18,250
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
₩19,315.8
-
683재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R026M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
683재고 상태
|
|
|
₩19,315.8
|
|
|
₩14,424.8
|
|
|
₩12,468.4
|
|
|
₩11,811.4
|
|
|
₩10,030.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
₩16,206
-
959재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R034M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
959재고 상태
|
|
|
₩16,206
|
|
|
₩12,672.8
|
|
|
₩10,555.8
|
|
|
₩9,417
|
|
|
₩7,986.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
₩15,154.8
-
981재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R040M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
981재고 상태
|
|
|
₩15,154.8
|
|
|
₩11,855.2
|
|
|
₩9,884.2
|
|
|
₩8,803.8
|
|
|
₩7,840.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
₩13,417.4
-
858재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R053M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
858재고 상태
|
|
|
₩13,417.4
|
|
|
₩9,986.4
|
|
|
₩8,322
|
|
|
₩7,416.8
|
|
|
₩6,599.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
₩11,650.8
-
556재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R078M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
556재고 상태
|
|
|
₩11,650.8
|
|
|
₩8,219.8
|
|
|
₩6,847.4
|
|
|
₩6,102.8
|
|
|
₩5,431.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
₩22,498.6
-
16재고 상태
-
1,680주문 중
-
신제품
|
Mouser 부품 번호
726-IMZC120R022M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
16재고 상태
1,680주문 중
주문 중:
720 예상 2026-04-23
960 예상 2026-04-30
|
|
|
₩22,498.6
|
|
|
₩17,417.8
|
|
|
₩15,052.6
|
|
|
₩15,038
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
대한민국