|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
₩46,851.4
-
1,054재고 상태
|
Mouser 부품 번호
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,054재고 상태
|
|
|
₩46,851.4
|
|
|
₩39,960.2
|
|
|
₩34,952.4
|
|
|
₩34,952.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
₩32,558
-
1,189재고 상태
|
Mouser 부품 번호
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,189재고 상태
|
|
|
₩32,558
|
|
|
₩26,645
|
|
|
₩23,535.2
|
|
|
₩23,535.2
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
₩24,893
-
3,612재고 상태
|
Mouser 부품 번호
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,612재고 상태
|
|
|
₩24,893
|
|
|
₩19,929
|
|
|
₩17,228
|
|
|
₩17,228
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
₩21,710.2
-
463재고 상태
|
Mouser 부품 번호
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
463재고 상태
|
|
|
₩21,710.2
|
|
|
₩16,220.6
|
|
|
₩14,016
|
|
|
₩13,271.4
|
|
|
₩11,271.2
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
₩17,943.4
-
1,900재고 상태
|
Mouser 부품 번호
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,900재고 상태
|
|
|
₩17,943.4
|
|
|
₩14,600
|
|
|
₩12,161.8
|
|
|
₩10,847.8
|
|
|
₩9,198
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
₩13,913.8
-
475재고 상태
|
Mouser 부품 번호
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
475재고 상태
|
|
|
₩13,913.8
|
|
|
₩10,541.2
|
|
|
₩8,789.2
|
|
|
₩7,825.6
|
|
|
₩6,978.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
₩10,307.6
-
1,651재고 상태
|
Mouser 부품 번호
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,651재고 상태
|
|
|
₩10,307.6
|
|
|
₩7,533.6
|
|
|
₩6,102.8
|
|
|
₩5,416.6
|
|
|
₩4,642.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
₩8,862.2
-
750재고 상태
|
Mouser 부품 번호
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
750재고 상태
|
|
|
₩8,862.2
|
|
|
₩6,190.4
|
|
|
₩5,007.8
|
|
|
₩4,438.4
|
|
|
₩3,810.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
₩7,489.8
-
256재고 상태
-
1,000예상 2026-03-05
|
Mouser 부품 번호
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
256재고 상태
1,000예상 2026-03-05
|
|
|
₩7,489.8
|
|
|
₩4,978.6
|
|
|
₩3,781.4
|
|
|
₩3,460.2
|
|
|
₩2,905.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
₩6,847.4
-
259재고 상태
-
5,000주문 중
|
Mouser 부품 번호
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
259재고 상태
5,000주문 중
주문 중:
1,000 예상 2026-03-05
4,000 예상 2026-03-19
|
|
|
₩6,847.4
|
|
|
₩4,526
|
|
|
₩3,401.8
|
|
|
₩3,080.6
|
|
|
₩2,613.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
₩12,147.2
-
9재고 상태
-
2,000예상 2026-06-11
|
Mouser 부품 번호
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
9재고 상태
2,000예상 2026-06-11
|
|
|
₩12,147.2
|
|
|
₩8,511.8
|
|
|
₩6,891.2
|
|
|
₩6,453.2
|
|
|
₩5,606.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|