|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
₩34,898.4
-
887재고 상태
|
Mouser 부품 번호
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
887재고 상태
|
|
|
₩34,898.4
|
|
|
₩25,485.6
|
|
|
₩25,322.8
|
|
|
₩25,308
|
|
|
₩24,272
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
₩26,862
-
3,495재고 상태
|
Mouser 부품 번호
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,495재고 상태
|
|
|
₩26,862
|
|
|
₩19,136.4
|
|
|
₩18,085.6
|
|
|
₩16,664.8
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
₩7,281.6
-
8,123재고 상태
|
Mouser 부품 번호
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
8,123재고 상태
|
|
|
₩7,281.6
|
|
|
₩4,839.6
|
|
|
₩3,448.4
|
|
|
₩3,256
|
|
|
₩3,034
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
₩50,364.4
-
177재고 상태
-
2,000예상 2027-03-18
|
Mouser 부품 번호
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
177재고 상태
2,000예상 2027-03-18
|
|
|
₩50,364.4
|
|
|
₩40,078.4
|
|
|
₩37,429.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
₩21,948.4
-
423재고 상태
|
Mouser 부품 번호
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
423재고 상태
|
|
|
₩21,948.4
|
|
|
₩15,170
|
|
|
₩13,912
|
|
|
₩13,512.4
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
₩18,470.4
-
1,700재고 상태
|
Mouser 부품 번호
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,700재고 상태
|
|
|
₩18,470.4
|
|
|
₩12,624.4
|
|
|
₩11,248
|
|
|
₩11,055.6
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
₩14,637.2
-
437재고 상태
|
Mouser 부품 번호
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
437재고 상태
|
|
|
₩14,637.2
|
|
|
₩10,093.6
|
|
|
₩8,243.6
|
|
|
₩8,228.8
|
|
|
₩8,006.8
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
₩10,641.2
-
1,211재고 상태
|
Mouser 부품 번호
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,211재고 상태
|
|
|
₩10,641.2
|
|
|
₩7,192.8
|
|
|
₩5,402
|
|
|
₩5,239.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
₩9,442.4
-
725재고 상태
|
Mouser 부품 번호
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
725재고 상태
|
|
|
₩9,442.4
|
|
|
₩6,201.2
|
|
|
₩5,091.2
|
|
|
₩5,017.2
|
|
|
₩4,292
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
₩7,992
-
889재고 상태
-
1,000주문 중
|
Mouser 부품 번호
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
889재고 상태
1,000주문 중
|
|
|
₩7,992
|
|
|
₩5,091.2
|
|
|
₩3,803.6
|
|
|
₩3,729.6
|
|
|
₩3,478
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
₩10,952
-
1,983예상 2026-05-14
|
Mouser 부품 번호
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,983예상 2026-05-14
|
|
|
₩10,952
|
|
|
₩8,598.8
|
|
|
₩6,748.8
|
|
|
₩6,290
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|