600V Single N-Channel Power MOSFETs

Taiwan Semiconductor 600V Single N-channel power MOSFETs incorporate super-junction technology and operate within the -55°C to 150°C temperature range. These MOSFETs are Pb-free, RoHS-compliant, and halogen-free. Typical applications include lighting, industrial, and switching applications.

결과: 29
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 포장
Taiwan Semiconductor MOSFET 600V, 11A, Single N-Channel Power MOSFET 3,990재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21.3 nC - 55 C + 150 C 78 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 3A, Single N-Channel Power MOSFET 3,658재고 상태
최소: 1
배수: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 4.3 V 7.6 nC - 55 C + 150 C 39 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 3A, Single N-Channel Power MOSFET 5,000재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 5.5 V 8.1 nC - 55 C + 150 C 55 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 11A, Single N-Channel Power MOSFET 4,990재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 61A, Single N-Channel High Voltage MOSFET 300재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61 A 48 mOhms - 30 V, 30 V 6 V 114 nC - 55 C + 150 C 431 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 51A, Single N-Channel High Voltage MOSFET 300재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 51 A 69 mOhms - 30 V, 30 V 6 V 86 nC - 55 C + 150 C 417 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 42A, Single N-Channel High Voltage MOSFET 290재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 84 mOhms - 30 V, 30 V 6 V 68 nC - 55 C + 150 C 357 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 14.5A, Single N-Channel High Voltage MOSFET 1,981재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 14.5 A 145 mOhms - 30 V, 30 V 6 V 40 nC - 55 C + 150 C 69 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 13A, Single N-Channel High Voltage MOSFET 1,988재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 13 A 180 mOhms - 30 V, 30 V 6 V 34 nC - 55 C + 150 C 63 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET 1,984재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 200 mOhms - 30 V, 30 V 6 V 30 nC - 55 C + 150 C 63 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 9.5A, Single N-Channel High Voltage MOSFET 1,985재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 9.5 A 285 mOhms - 30 V, 30 V 6 V 22 nC - 55 C + 150 C 56 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET 3,878재고 상태
최소: 1
배수: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET 7,500재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 4A, Single N-Channel Power MOSFET 4,394재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET 2,747재고 상태
최소: 1
배수: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 4A, Single N-Channel Power MOSFET 3,747재고 상태
최소: 1
배수: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 14A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 12 주
최소: 2,000
배수: 2,000
: 2,000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 14A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 12 주
최소: 2,000
배수: 2,000
: 2,000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 12 주
최소: 2,000
배수: 2,000
: 2,000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 12 A 165 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 12 주
최소: 2,000
배수: 2,000
: 2,000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 196 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 24A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 40 주
최소: 4,000
배수: 2,000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 24 A 69 mOhms - 30 V, 30 V 6 V 89 nC - 55 C + 150 C 89 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 21A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 40 주
최소: 4,000
배수: 2,000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 21 A 84 mOhms - 30 V, 30 V 6 V 69 nC - 55 C + 150 C 83 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 47A, Single N-Channel High Voltage MOSFET, TOLL 비재고 리드 타임 14 주
최소: 4,000
배수: 2,000
: 2,000

Si SMD/SMT TOLL-8 N-Channel 1 Channel 600 V 47 A 84 mOhms 20 V 6 V 69 nC - 55 C + 150 C 431 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 27A, Single N-Channel High Voltage MOSFET, PDFN88 비재고 리드 타임 14 주
최소: 6,000
배수: 3,000
: 3,000

Si SMD/SMT PDFN88-4 N-Channel 1 Channel 600 V 27 A 110 mOhms 30 V 6 V 56 nC - 55 C + 150 C 178 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 17A, Single N-Channel High Voltage MOSFET 비재고 리드 타임 40 주
최소: 4,000
배수: 2,000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 17 A 110 mOhms - 30 V, 30 V 6 V 55 nC - 55 C + 150 C 73 W Enhancement Tube