|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG015N065SC1
- onsemi
-
1:
₩42,514.4
-
3,376재고 상태
|
Mouser 부품 번호
863-NTBG015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
3,376재고 상태
|
|
|
₩42,514.4
|
|
|
₩33,470.4
|
|
|
₩32,452
|
|
|
₩30,719.2
|
|
|
₩30,719.2
|
|
최소: 1
배수: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
145 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL075N065SC1
- onsemi
-
1:
₩16,340
-
653재고 상태
|
Mouser 부품 번호
863-NTHL075N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
653재고 상태
|
|
|
₩16,340
|
|
|
₩9,606.4
|
|
|
₩8,040.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
85 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
61 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L015N065SC1
- onsemi
-
1:
₩41,116
-
201재고 상태
|
Mouser 부품 번호
863-NTH4L015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
201재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
142 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TOLL 650V
- NTBL045N065SC1
- onsemi
-
1:
₩20,231.2
-
1,374재고 상태
|
Mouser 부품 번호
863-NTBL045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TOLL 650V
|
|
1,374재고 상태
|
|
|
₩20,231.2
|
|
|
₩13,573.6
|
|
|
₩11,719.2
|
|
|
₩11,628
|
|
|
₩10,944
|
|
|
₩10,944
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
73 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL060N065SC1
- onsemi
-
1:
₩15,443.2
-
569재고 상태
|
Mouser 부품 번호
863-NTHL060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
569재고 상태
|
|
|
₩15,443.2
|
|
|
₩11,126.4
|
|
|
₩9,636.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG060N065SC1
- onsemi
-
1:
₩18,650.4
-
312재고 상태
|
Mouser 부품 번호
863-NTBG060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
312재고 상태
|
|
|
₩18,650.4
|
|
|
₩12,950.4
|
|
|
₩10,244.8
|
|
|
₩9,697.6
|
|
|
₩9,697.6
|
|
최소: 1
배수: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
170 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
- NTH4L070N120M3S
- onsemi
-
1:
₩15,504
-
413재고 상태
|
Mouser 부품 번호
863-NTH4L070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
|
|
413재고 상태
|
|
|
₩15,504
|
|
|
₩10,062.4
|
|
|
₩7,250.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
37 A
|
91 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
252 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 70MOHM 1200V M3
- NTHL070N120M3S
- onsemi
-
1:
₩13,376
-
748재고 상태
|
Mouser 부품 번호
863-NTHL070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 70MOHM 1200V M3
|
|
748재고 상태
|
|
최소: 1
배수: 1
최대: 60
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
37 A
|
91 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
252 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
- NVH4L070N120M3S
- onsemi
-
1:
₩26,493.6
-
217재고 상태
|
Mouser 부품 번호
863-NVH4L070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
|
|
217재고 상태
|
|
|
₩26,493.6
|
|
|
₩16,355.2
|
|
|
₩15,184.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
64.8 mOhms
|
- 8 V, + 22 V
|
3.37 V
|
47.9 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 60MOHM 900V
- NTBG060N090SC1
- onsemi
-
1:
₩20,170.4
-
475재고 상태
|
Mouser 부품 번호
863-NTBG060N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 60MOHM 900V
|
|
475재고 상태
|
|
|
₩20,170.4
|
|
|
₩15,352
|
|
|
₩13,999.2
|
|
|
₩12,266.4
|
|
|
₩12,266.4
|
|
최소: 1
배수: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
44 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
88 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
EliteSiC
|
|