|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
₩26,995.4
-
837재고 상태
|
Mouser 부품 번호
726-AIMW120R045M1XKS
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
837재고 상태
|
|
|
₩26,995.4
|
|
|
₩21,374.4
|
|
|
₩20,571.4
|
|
|
₩20,556.8
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
₩6,935
-
1,121재고 상태
-
4,000예상 2026-05-21
|
Mouser 부품 번호
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
1,121재고 상태
4,000예상 2026-05-21
|
|
|
₩6,935
|
|
|
₩4,584.4
|
|
|
₩3,445.6
|
|
|
₩3,124.4
|
|
|
₩2,569.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
₩21,637.2
-
840재고 상태
|
Mouser 부품 번호
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
840재고 상태
|
|
|
₩21,637.2
|
|
|
₩14,497.8
|
|
|
₩12,950.2
|
|
|
₩12,935.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
₩12,059.6
-
332재고 상태
|
Mouser 부품 번호
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
332재고 상태
|
|
|
₩12,059.6
|
|
|
₩7,650.4
|
|
|
₩6,555.4
|
|
|
₩6,190.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
₩18,585.8
-
153재고 상태
-
240예상 2026-02-23
|
Mouser 부품 번호
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
153재고 상태
240예상 2026-02-23
|
|
|
₩18,585.8
|
|
|
₩11,256.6
|
|
|
₩9,650.6
|
|
|
₩9,577.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
₩10,015.6
-
422재고 상태
|
Mouser 부품 번호
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
422재고 상태
|
|
|
₩10,015.6
|
|
|
₩5,767
|
|
|
₩4,818
|
|
|
₩4,234
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
₩10,789.4
-
비재고 리드 타임 11 주
|
Mouser 부품 번호
726-IMZA65R072M1HXKS
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
비재고 리드 타임 11 주
|
|
|
₩10,789.4
|
|
|
₩6,248.8
|
|
|
₩5,124.6
|
|
|
₩4,686.6
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
대한민국