|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
₩30,871.2
-
830재고 상태
-
NRND
|
Mouser 부품 번호
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
830재고 상태
|
|
|
₩30,871.2
|
|
|
₩22,374.4
|
|
|
₩21,416.8
|
|
|
₩21,401.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
₩23,332
-
238재고 상태
|
Mouser 부품 번호
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
238재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
₩22,389.6
-
1,300재고 상태
-
NRND
|
Mouser 부품 번호
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,300재고 상태
|
|
|
₩22,389.6
|
|
|
₩17,084.8
|
|
|
₩13,512.8
|
|
|
₩12,524.8
|
|
|
₩12,190.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
₩10,974.4
-
388재고 상태
|
Mouser 부품 번호
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
388재고 상태
|
|
|
₩10,974.4
|
|
|
₩7,098.4
|
|
|
₩5,958.4
|
|
|
₩5,517.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
₩15,580
-
29재고 상태
-
240예상 2027-04-29
-
NRND
|
Mouser 부품 번호
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
29재고 상태
240예상 2027-04-29
|
|
|
₩15,580
|
|
|
₩10,123.2
|
|
|
₩8,101.6
|
|
|
₩7,645.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
₩8,116.8
-
11,000예상 2026-07-02
|
Mouser 부품 번호
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
11,000예상 2026-07-02
|
|
|
₩8,116.8
|
|
|
₩5,396
|
|
|
₩4,377.6
|
|
|
₩3,663.2
|
|
|
₩3,176.8
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
₩12,160
-
비재고 리드 타임 52 주
-
NRND
|
Mouser 부품 번호
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
비재고 리드 타임 52 주
|
|
|
₩12,160
|
|
|
₩7,478.4
|
|
|
₩6,718.4
|
|
|
₩5,882.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
대한민국