Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

결과: 20
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Automotive Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Automotive Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Industrial Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Automotive Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC MOSFET 650V 27mR, SAPKG-9L, Automotive Grade
600예상 2026-08-28
최소: 1
배수: 1
: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Automotive Grade
300예상 2026-04-03
최소: 1
배수: 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFET 1200V 20mR, TO-247-4L, Industrial Grade
300예상 2026-04-03
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Industrial Grade
300예상 2026-03-27
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Industrial Grade
300예상 2026-03-27
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Automotive Grade
300예상 2026-05-01
최소: 1
배수: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Industrial Grade
300예상 2026-04-03
최소: 1
배수: 1

Through Hole TO-247-4L 650 V

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Industrial Grade
300예상 2026-05-01
최소: 1
배수: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
300예상 2026-03-27
최소: 1
배수: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Automotive Grade 비재고 리드 타임 15 주
최소: 1
배수: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 32mR, TO247-4L, Industrial Grade 비재고 리드 타임 15 주
최소: 1
배수: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Industrial Grade 비재고 리드 타임 15 주
최소: 1
배수: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C