STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

결과: 17
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 패키지/케이스 장착 스타일 구성 콜렉터- 최대 이미터 전압 VCEO 콜렉터-이미터 포화 전압 최대 게이트 이미터 전압 25 C의 지속적인 컬렉터 전류 Pd - 전력 발산 최저 작동온도 최고 작동온도 시리즈 포장
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 120 A low loss 380재고 상태
최소: 1
배수: 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 6 A low loss 3,710재고 상태
최소: 1
배수: 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1,457재고 상태
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss 980재고 상태
최소: 1
배수: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 4 A low loss 2,128재고 상태
최소: 1
배수: 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 54재고 상태
최소: 1
배수: 1

- 20 V, 20 V HB2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,470재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 75 A low loss 679재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads 692재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 15 A low loss 140재고 상태
최소: 1
배수: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,131재고 상태
최소: 1
배수: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 10 A low loss 447재고 상태
2,000예상 2026-11-09
최소: 1
배수: 1

Si STGP10M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 8 A low loss 344재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 75 A low loss
396예상 2026-03-26
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 6 A low loss 비재고 리드 타임 15 주
최소: 1
배수: 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package 비재고 리드 타임 15 주
최소: 1
배수: 1
: 1,000

Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 4 A low loss 비재고 리드 타임 15 주
최소: 2,000
배수: 1,000
: 1,000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel