Wolfspeed / Cree CGHV50200F GaN HEMT
Wolfspeed CGHV50200F 200W GaN(질화갈륨) HEMT(고전자 이동성 트랜지스터)는 대류권 산란 통신과 BLOS(Beyond Line-of-Site) 같은 위성 통신 애플리케이션에 적합합니다. CGHV50200F GaN HEMT는 쉽게 사용할 수 있도록 50Ω에 맞춰 정합되어 있습니다. 전력 증폭기 작동의 연속파(CW), 펄스 및 선형 모드용으로 설계한 소자입니다. 이 소자는 세라믹/금속 플랜지형 440217 패키지로 공급됩니다.
Wolfspeed GaN (Gallium-Nitride) HEMT (High-Electron-Mobility Transistors) offer high efficiency, high gain, and wide bandwidth capabilities. These devices deliver a higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than conventional silicon (Si) and gallium arsenide (GaAs) devices.
Features
- 200W Peak power output
- Power gain: 13dB
- Frequency: 4.4GHz to 5.0GHz
- Drain efficiency: 65%
- Typical Power (PSAT): 180W
- Power Added Efficiency (PAE): 33%
- 50Ω Internally Matched
애플리케이션
- Troposcatter communications
- Beyond Line of Sight (BLOS)
- 4.4GHz to 5.0GHz C-Band SatCom applications
CGHV50200F-AMP Test Fixture offers an evaluation platform and reference design for the CGHV50200F GaN HEMT. The Test Fixture includes the CGHV50200F device.