Toshiba SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches.
With a size of only 0.8mm × 0.6mm, the CST3C is just one-third the size of the industry standard SOT-723 package. The CST3C packaging is ideal for high-density mounting while achieving lower on-resistance in comparison to the SOT-723. The CST3C package is controllable with a gate voltage of 1.2V
Features
- N-channel MOSFETs
- 20V to 60V range of drain-source voltages (VDSS), the maximum voltage that can be applied across drain and source, with gate and source short-circuited
- +12/-8 to ±20 range of gate-source voltages (VGSS), the maximum voltage that can be applied across gate and source, with drain and source short-circuited.
- 3.5A to 15A continuous drain current
- -55°C to +150°C operating temperature range
- 390mΩ to 4.7Ω drain-source resistance (RDS(ON))
- -20V to 60V drain-source breakdown voltage (Vds)
- 150mW to 2W power dissipation (Pd)
- SMD/SMT
Applications
- Mobile devices (wearable devices, smartphones, tablet PCs, etc.)
- Load switches
- DC-DC converters
- General-purpose switches
N-channel MOSFETs
게시일: 2016-04-07
| 갱신일: 2022-03-11