onsemi N-Channel PowerTrench® MOSFETs

onsemi N-Channel PowerTrench MOSFETs are produced using onsemi's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. onsemi N-Channel PowerTrench MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.

The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field-effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge, this device can be effectively used as a "high side" control switch or "low side" synchronous rectifier.

Specifications

  • 25 to 250V breakdown voltage
  • 1.16 to 430mΩ resistance range
  • 1.6 to 460A current
  • 1.5 to 333W power dissipation
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부품 번호 데이터시트 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 시리즈
FDB0165N807L FDB0165N807L 데이터시트 80 V 310 A 2.7 mOhms FDB0165N807L
FDD86250 FDD86250 데이터시트 150 V 51 A 31 mOhms FDD86250
NVMFS5C420NLT1G NVMFS5C420NLT1G 데이터시트 40 V 277 A 1 mOhms NVMFS5C420NL
FDD7N25LZTM FDD7N25LZTM 데이터시트 250 V 6.2 A 430 mOhms FDD7N25LZ
FDMC86244 FDMC86244 데이터시트 150 V 15 A 134 mOhms FDMC86244
FDB0630N1507L FDB0630N1507L 데이터시트 150 V 130 A 26 mOhms FDB0630N1507L
FDT86246 FDT86246 데이터시트 150 V 2 A 236 mOhms FDT86246
FDBL0260N100 FDBL0260N100 데이터시트 100 V 200 A 2.6 mOhms FDBL0260N100
FDBL0240N100 FDBL0240N100 데이터시트 100 V 210 A 2.8 mOhms FDBL0240N100
FDD86102LZ FDD86102LZ 데이터시트 100 V 42 A 31 mOhms FDD86102LZ
게시일: 2011-08-10 | 갱신일: 2024-11-07