Micron HBM4 DRAM

Micron HBM4 DRAM is designed with 12-high packaging technology and memory built-in self-test (MBIST). The high-quality construction and features ensure the HBM4 provides seamless integrations for users developing next-generation AI platforms. Over 20% more power efficiency is offered by the HBM4 when compared to the previous-generation HBM3E. The HBM4 drives quicker insights and discoveries that will foster innovation in various fields like healthcare, finance, and transportation. Micron HBM4 DRAM has a 2048-bit interface that allows this module to achieve speeds greater than 2.0TB/s per memory stack.