Kingston Auto Temp DDR3L SDRAM

Kingston Auto Temp DDR3L SDRAM memory devices feature double-data-rate architecture and 8-bit prefetch pipelined design for high-speed, dual data transfers per clock cycle. These 2G/4Gbit density DDR3L SDRAMs, with 16M/32M words x 16 bits x 8 banks organization, are available in RoHS-compliant and Halogen-free 96-ball FBGA packages. These devices are designed to meet the needs of applications that require an extended automotive operating temperature range of -40°C to 105°C. Typical applications include automotive, industrial IoT / robotics, factory automation, and 5G networking/telecommunications communication modules.

Features

  • Double-data-rate architecture: two data transfers per clock cycle
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
  • DQS is edge-aligned with data for READs, center-aligned with data for WRITEs
  • Differential clock inputs (CK and /CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
  • Data mask (DM) for write data
  • Posted /CAS by programmable additive latency for better command and data bus efficiency
  • On-Die-Termination (ODT) for better signal quality:
    • Synchronous ODT
    • Dynamic ODT
    • Asynchronous ODT
  • Multi-Purpose Register (MPR) for pre-defined pattern read-out
  • ZQ calibration for DQ drive and ODT
  • Automatic Self-Refresh (ASR)
  • /RESET pin for Power-up sequence and reset function
  • SRT range - Normal/extended
  • Programmable Output driver impedance control

Specifications

  • 2G/4G bits density
  • Organization:
    • 16Mwords x 16bits x 8banks
    • 32Mwords x 16bits x 8banks
  • Package:
    • 96-ball FBGA
    • Lead-free (RoHS compliant) and Halogen-free
  • Power supply: 1.35V (typical)
    • VDD, VDDQ = 1.283V to 1.45V
    • Backward compatible for VDD, VDDQ=1.5V to 0.075V
  • Data rate:
    • 2133Mbps/1866Mbps/1600Mbps/1333Mbps (maximum)
    • Backward compatible
  • 2KB page size:
    • Row address: A0 to A13
    • Column address: A0 to A9
  • Eight internal banks for concurrent operation
  • Burst Lengths (BL): 8 and 4 with Burst Chop (BC)
  • Burst Type (BT):
    • Sequential (8, 4 with BC)
    • Interleave (8, 4 with BC)
  • Programmable /CAS (Read) Latency (CL)
  • Programmable /CAS Write Latency (CWL)
  • Precharge: auto precharge option for each burst access
  • Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
  • Refresh:
    • auto-refresh
    • self-refresh
  • Refresh cycles:
    • Average refresh period
    • 7.8µs at -40°C ≤ Temperature ≤ 85°C
    • 3.9µs at 85°C ≤ Temperature ≤ 105°C
  • Operating Case temperature range:
    • 0°C to 95°C (commercial temperature)
    • -40°C to 95°C (industrial temperature)
    • -40°C to 105°C (automotive temperature)
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D1216ECMDXGMEY-U D1216ECMDXGMEY-U 데이터시트 DRAM Auto temp 2Gb 128Mx16 96 ball FBGA DDR3L 2133
D2516ECMDXGMEY-U D2516ECMDXGMEY-U 데이터시트 DRAM Auto temp 4Gb 256Mx16 96 ball FBGA DDR3L 2133
게시일: 2024-07-01 | 갱신일: 2025-04-03