GeneSiC Semiconductor 1200V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 1200V SiC Schottky MPS™ Diodes offers both system efficiency and high system reliability. With an increased system power density, the 1200V SiC Schottky MPS Diodes enable extremely fast switching and are easy to parallel without a thermal runaway.

The GeneSiC 1200V SiC Schottky MPS Diodes offers a forward current range of 1A to 200A and an operating temperature of -55C to +175C. Additionally, the through-hole or surface mount devices have a wide range of power dissipations from 42W to 1088W. The 1200V SiC Diodes are available in DO-214, TO-252, TO-220, TO-247, and SOT-227 packages. The 1200V SiC Diodes are ideal for PFC, solar inverters, battery chargers, LED, and HID lighting applications.

Features

  • Low VF for high temperature operation
  • Enhanced surge and avalanche robustness
  • Superior figure of merit QC/IF
  • Low thermal resistance
  • Low reverse leakage current
  • Temperature independent fast switching
  • Positive temperature coefficient of VF
  • High dV/dt ruggedness

Applications

  • Power Factor Correction (PFC)
  • Solar inverters
  • Battery chargers
  • High frequency converters
  • Switched Mode Power Supply (SMPS)
  • AC/DC Power supplies
  • Anti-Parallel / free-wheeling diode
  • LED and HID Lighting
게시일: 2020-12-07 | 갱신일: 2023-04-18