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Everspin Technologies MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 

Features

  • MR0A08B
    • Dual supply organized as 131,072 words of 8 bits
    • Fast 35ns read/write cycle
    • SRAM Compatible timing, uses existing SRAM controllers without redesign
    • Unlimited read & write endurance
    • Data always non-volatile for >20-years at temperature
    • One memory replaces Flash, SRAM, EEPROM and BBSRAM in system for simpler, more efficient design
    • Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly improving reliability
    • 3.3V Power supply
    • Automatic data protection on power loss
  • MR0D08B
    • Dual supply organized as 131,072 words of 8 bits
    • Fast 45ns Read/Write timing with unlimited endurance
    • SRAM compatible timing
    • Data always non-volatile for >20-years at the temperature
    • One memory replaces Flash, SRAM, EEPROM, and BBSRAM in a system for simpler, more efficient design
    • +3.3 Volt power supply
    • I/O voltage range supports wide +1.65V to +2.6V interfaces
    • Improves reliability by replacing battery-backed SRAM
  • MR0A16A
    • Fast 35ns read/write cycle
    • Organized as 65,536 words of 16 bits
    • SRAM Compatible timing and Pin-out uses existing SRAM controllers without redesign
    • Unlimited read & write endurance
    • Data always non-volatile for >20-years at temperature
    • One memory replaces Flash, SRAM, EEPROM and BBRAM in system for simpler, more efficient design
    • Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, reliability, and liability issues
    • 3.3V Power supply
    • Automatic data protection on power loss

Block Diagrams

Block Diagram - Everspin Technologies MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM
Block Diagram - Everspin Technologies MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM
Block Diagram - Everspin Technologies MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Associated Products

Everspin Technologies Magnetoresistive Random Access Memory (MRAM)

Delivers significantly long data retention of >20 years and unlimited endurance.

Learn MoreEverspin Technologies Magnetoresistive Random Access Memory (MRAM) 정보 View ProductsEverspin Technologies Magnetoresistive Random Access Memory (MRAM)과 관련됨
View Results ( 20 ) Page
부품 번호 데이터시트 시리즈 패키지/케이스 설명
MR0A08BYS35 MR0A08BYS35 데이터시트 MR0A08B TSOP-II-44 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A16ACMA35 MR0A16ACMA35 데이터시트 MR0A16A BGA-48 MRAM(자기 메모리) 1Mb 3.3V 64Kx16 35ns Parallel MRAM(자기 메모리)
MR0A08BCMA35 MR0A08BCMA35 데이터시트 MR0A08B BGA-48 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A08BCYS35 MR0A08BCYS35 데이터시트 MR0A08B TSOP-II-44 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A16ACYS35 MR0A16ACYS35 데이터시트 MR0A16A TSOP-II-44 MRAM(자기 메모리) 1Mb 3.3V 64Kx16 35ns Parallel MRAM(자기 메모리)
MR0A16AYS35 MR0A16AYS35 데이터시트 MR0A16A TSOP-II-44 MRAM(자기 메모리) 1Mb 3.3V 64Kx16 35ns Parallel MRAM(자기 메모리)
MR0A08BCMA35R MR0A08BCMA35R 데이터시트 MR0A08B BGA-48 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A08BCYS35R MR0A08BCYS35R 데이터시트 MR0A08B TSOP-II-44 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A08BMA35 MR0A08BMA35 데이터시트 MR0A08B BGA-48 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
MR0A08BMA35R MR0A08BMA35R 데이터시트 MR0A08B BGA-48 MRAM(자기 메모리) 1Mb 3.3V 128Kx8 35ns Parallel MRAM(자기 메모리)
게시일: 2011-08-03 | 갱신일: 2025-10-28