Everspin Technologies EMD3D256M08/16B DRAMs
Everspin Technologies EMD3D256M08/16B DRAMs are non-volatile 256Mb DDR3 spin-transfer torque Magnetoresistive Random Access Memory (MRAM) with a maximum 667MHz clock frequency. These DRAMs offer non-volatility and high endurance at DDR3 speeds. The DDR3 STT-MRAM is a high-speed MRAM internally configured as an eight-bank RAM. These DRAMs are capable of DDR3 operation at rates of up to 1333MT/sec/pin. The EMD3D256M08/16B DRAMs are designed to comply with all DDR3 DRAM features, including On-Device Termination (ODT) and internal ZQ calibration. The spin-torque MRAM technology cell refresh is not required, simplifying system design and reducing overhead.Features
- Non-volatile 256Mb (32Mb x 816Mb x 16) DDR3
- Supports standard DDR3 SDRAM features
- VDD 1.5V +/- 0.075V
- Up to 667MHz fCK (1333MT/sec/pin)
- Page size of 512-bits (x8) or 1024-bits (x16)
- All addresses and control inputs are latched on the rising edge of the clock
- On-Device Termination (ODT)
- On-chip DLL aligns DQ, DQS, and DQS transition with CK transition
- Burst length of 8 with a programmable burst chop length of 4
- Standard 10mm x 13mm 78-ball (x8) or 96-ball (x16) BGA package
Application Notes
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게시일: 2018-06-12
| 갱신일: 2022-07-21
