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Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C. This MOSFET features a low total gate charge of 19nC (at 10V) and fast switching characteristics, including an 11ns turn‑on delay and 10ns turn‑off delay. The DI009N10PQ MOSFET offers 20A peak drain current and 3.6mJ avalanche-rated energy. This diode is housed in a PowerQFN 5x6 package and is AEC‑Q101 qualified. Typical applications include DC/DC converters, power supplies, DC drives, power tools, and synchronous rectifiers.

Features

  • Low on‑state resistance
  • Low gate charge
  • Fast switching times
  • Avalanche rated
  • Low profile, space-saving package
  • RoHS compliant

Applications

  • DC/DC converter
  • Power supplies
  • DC drives
  • Power tools
  • Synchronous rectifiers

Specifications

  • 100V drain‑source voltage 
  • 9A continuous drain current
  • Total gate charge:
    • 19nC at 10V
    • 9nC at 4.5V
  • 11ns turn‑on delay time 
  • 10ns turn‑off delay time
  • 3ns rise time
  • 5ns fall time
  • 3.6mJ avalanche-rated energy (IAS=4.9V, VG=10V, L=0.5mH, and RG=25Ω)

Dimension Diagram

Mechanical Drawing - Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
게시일: 2026-03-03 | 갱신일: 2026-03-10