Coherent TM3x00 1200V SIC MOSFETs
Coherent TM3x00 1200V SIC MOSFETs feature low RDS(on), superior thermal performance, and industry-leading avalanche capability, ensuring exceptional efficiency and versatility for automotive, industrial, and aerospace systems. The TM3x00 devices are built on Coherent's advanced Gen3+ technology platform and implement fast switching via ultra-low gate resistance. The TM3x00 1200V MOSFETs also provide very low-temperature invariant switching losses in TO247-4L, TSPAK, and TO263-7L package options. These devices are AEC-Q101 qualified at +200°C junction temperature and are proven in AS9100-rated aerospace applications.
Features
- High voltage and low RDS(ON) up to +200°C
- Fast switching enabled by ultra-low gate resistance
- Very low, temperature invariant switching losses
- Avalanche ruggedness superior to silicon
- Higher system efficiency, performance, and reliability
- Fast recovery body diode for synchronous rectification
- Reduces cooling requirements, overall system cost, and complexity
- Works in topologies with continuous hard commutation
- Increases power density
- Enables bidirectional topologies
- Suitable for higher temperatures and harsher environments
- AEC-Q101 qualified
- Lead-free
- RoHS and REACH compliant
Applications
- Automotive
- Industrial
- Aerospace
Specifications
- 1200V drain-source breakdown voltage
- 12mΩ to 39mΩ drain-source on-resistance range
- 61A to 171A current rating range
- 1.9J to 5.3J avalanche energy range
- -55°C to +200°C operating junction temperature range
- TO247-4L, TO263-7L, and TSPAK package options
Typical Application Circuit
게시일: 2023-12-01
| 갱신일: 2025-02-24