Alliance Memory Pseudo SRAM

Alliance Memory Pseudo SRAM uses DRAM-type memory cells and has a refresh-free operation and extreme low power consumption technology. The interface is compatible to a low-power Asynchronous type SRAM. These devices are variations of the industry-standard Flash control interface with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduces the required signal count and increases read/write bandwidth.

Features

  • Address access speed 70ns
  • Power Supply Voltage : 2.6 ~ 3.3V
  • Separated I/O power(VccQ) & Core power(Vcc)
  • Three state outputs
  • Byte read/write control by UB# / LB#
  • Auto-TCSR for power saving
  • Package type: 48-FPBGA 6.0x7.0
  • Operating Temperature
    • Industrial: -40℃ ~ 85℃
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부품 번호 데이터시트 메모리 크기 조직 공급 전압 - 최대 공급 전압 - 최소 패키지/케이스
AS1C8M16PL-70BIN AS1C8M16PL-70BIN 데이터시트 128 Mbit 8 M x 16 1.95 V 1.7 V FBGA-49
AS1C4M16PL-70BIN AS1C4M16PL-70BIN 데이터시트 64 Mbit 4 M x 16 1.95 V 1.7 V FBGA-49
AS1C4M16PL-70BINTR AS1C4M16PL-70BINTR 데이터시트 64 Mbit 4 M x 16 1.95 V 1.7 V FBGA-49
AS1C8M16PL-70BINTR AS1C8M16PL-70BINTR 데이터시트 128 Mbit 8 M x 16 1.95 V 1.7 V FBGA-49
게시일: 2018-10-17 | 갱신일: 2022-11-07