Rectron 최신 제품 디스크리트 반도체
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Rectron MMBD120x 100V Small Signal Diodes
03-01-2024
03-01-2024
Fast switching devices with 4ns maximum reverse recovery time available in a SOT-23 package.
Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET
10-10-2022
10-10-2022
Uses trench technology to provide excellent RDS(ON) with a low gate charge.
Rectron RM3134 Dual N-Channel MOSFET
10-10-2022
10-10-2022
Lead-free product housed in a surface mount package.
Rectron RM2312 N-Channel Enhancement Mode Power MOSFET
10-10-2022
10-10-2022
Uses advanced trench technology to provide excellent RDS(ON).
Rectron RM135N100HD N-Channel Super Trench Power MOSFET
09-21-2022
09-21-2022
Features Super Trench technology optimized for efficient high-frequency switching performance.
Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET
09-21-2022
09-21-2022
Features advanced Trench technology and design to provide excellent RDS(ON) and a low gate charge.
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Diotec Semiconductor ESD3B36WS-AQ ESD Protection Diode
08-14-2026
08-14-2026
Features high peak-pulse power and bidirectional clamping.
Diotec Semiconductor P6KE47CA-AQ Transient Voltage Suppressor Diode
08-14-2026
08-14-2026
Provide reliable protection against transient voltage spikes, ESD, and other overvoltage events.
Diotec Semiconductor SKL12-AQ SMD Schottky Barrier Rectifier Diode
08-14-2026
08-14-2026
Features a low forward voltage drop in a low-profile package.
iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
08-12-2026
08-12-2026
Automotive 200V N-channel MOSFET with SuperQ technology and TO-220 packaging.
STMicroelectronics STH4N150-2AG N-채널 전력 MOSFET
08-10-2026
08-10-2026
자동차 애플리케이션에 적합한 높은 전압 수준과 뛰어난 내구성을 보장하도록 설계되었습니다.
Texas Instruments ESD2CANFD24W-Q1 ESD 보호 다이오드
08-04-2026
08-04-2026
CAN, CAN FD, CAN SIC 및 CAN XL 네트워크용 자동차용 ESD 보호 다이오드입니다.
Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode
06-29-2026
06-29-2026
Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.
Vishay MXP075 MaxSiC® 750V N-채널 MOSFET
06-19-2026
06-19-2026
750V의 드레인-소스 전압, 빠른 전환 속도 및 3μs의 단락 견딤 시간을 특징으로 합니다.
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06-18-2026
06-18-2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
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