|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250AB-70+
- Analog Devices / Maxim Integrated
-
1:
₩243,968.4
-
68재고 상태
|
Mouser 부품 번호
700-DS1250AB-70
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
68재고 상태
|
|
|
₩243,968.4
|
|
|
₩223,906.8
|
|
|
₩223,891.2
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.25 V
|
4.75 V
|
85 mA
|
0 C
|
+ 70 C
|
DS1250AB
|
Tube
|
|
|
|
NVRAM 4Mb 3V 25ns 256K x 16 nvSRAM
- CY14B104NA-ZS25XI
- Infineon Technologies
-
1:
₩86,580
-
709재고 상태
|
Mouser 부품 번호
727-CY14B104NAZS25XI
|
Infineon Technologies
|
NVRAM 4Mb 3V 25ns 256K x 16 nvSRAM
|
|
709재고 상태
|
|
|
₩86,580
|
|
|
₩80,371.2
|
|
|
₩77,875.2
|
|
|
₩75,987.6
|
|
|
보기
|
|
|
₩73,975.2
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
TSOP-II-44
|
|
4 Mbit
|
256 k x 16
|
16 bit
|
45 ns
|
3.6 V
|
2.7 V
|
70 mA
|
- 40 C
|
+ 85 C
|
CY14B104NA
|
Tray
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250Y-70+
- Analog Devices / Maxim Integrated
-
1:
₩312,390
-
18재고 상태
|
Mouser 부품 번호
700-DS1250Y-70
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
18재고 상태
|
|
|
₩312,390
|
|
|
₩287,570.4
|
|
|
₩220,942.8
|
|
|
₩216,777.6
|
|
최소: 1
배수: 1
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.5 V
|
4.5 V
|
85 mA
|
0 C
|
+ 70 C
|
DS1250Y
|
Tube
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250Y-70IND+
- Analog Devices / Maxim Integrated
-
1:
₩257,103.6
-
19재고 상태
|
Mouser 부품 번호
700-DS1250Y-70IND
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
19재고 상태
|
|
|
₩257,103.6
|
|
|
₩235,934.4
|
|
|
₩226,527.6
|
|
|
₩222,253.2
|
|
최소: 1
배수: 1
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.5 V
|
4.5 V
|
85 mA
|
- 40 C
|
+ 85 C
|
DS1250Y
|
Tube
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250YP-70IND+
- Analog Devices / Maxim Integrated
-
1:
₩347,443.2
-
55재고 상태
|
Mouser 부품 번호
700-DS1250YP-70IND
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
55재고 상태
|
|
최소: 1
배수: 1
|
|
|
PowerCap Module-34
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.5 V
|
4.5 V
|
85 mA
|
- 40 C
|
+ 85 C
|
DS1250YP
|
Tray
|
|
|
|
NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM
- CY14B104NA-ZS45XI
- Infineon Technologies
-
1:
₩90,698.4
-
281재고 상태
|
Mouser 부품 번호
727-CY14B104NAZS45XI
|
Infineon Technologies
|
NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM
|
|
281재고 상태
|
|
|
₩90,698.4
|
|
|
₩83,803.2
|
|
|
₩81,088.8
|
|
|
₩79,060.8
|
|
|
보기
|
|
|
₩63,663.6
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
TSOP-II-44
|
|
4 Mbit
|
256 k x 16
|
16 bit
|
45 ns
|
3.6 V
|
2.7 V
|
70 mA
|
- 40 C
|
+ 85 C
|
CY14B104NA
|
Tray
|
|
|
|
NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM
- CY14B104M-ZSP45XI
- Infineon Technologies
-
1:
₩75,223.2
-
3재고 상태
|
Mouser 부품 번호
727-CY14B104MZSP45XI
|
Infineon Technologies
|
NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM
|
|
3재고 상태
|
|
|
₩75,223.2
|
|
|
₩69,529.2
|
|
|
₩62,056.8
|
|
|
₩60,216
|
|
|
보기
|
|
|
₩58,687.2
|
|
|
₩56,799.6
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
TSOP-II-54
|
|
4 Mbit
|
256 k x 16
|
16 bit
|
45 ns
|
3.6 V
|
2.7 V
|
70 mA
|
- 40 C
|
+ 85 C
|
CY14B104M
|
Tray
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250Y-100+
- Analog Devices / Maxim Integrated
-
1:
₩251,253.6
-
11예상 2026-08-26
|
Mouser 부품 번호
700-DS1250Y-100
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
11예상 2026-08-26
|
|
|
₩251,253.6
|
|
|
₩230,568
|
|
|
₩221,379.6
|
|
|
₩217,214.4
|
|
최소: 1
배수: 1
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.5 V
|
4.5 V
|
85 mA
|
0 C
|
+ 70 C
|
DS1250Y
|
Tube
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250AB-70IND+
- Analog Devices / Maxim Integrated
-
1:
₩309,394.8
-
비재고 리드 타임 14 주
|
Mouser 부품 번호
700-DS1250AB-70IND
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
비재고 리드 타임 14 주
|
|
|
₩309,394.8
|
|
|
₩228,618
|
|
|
₩228,602.4
|
|
최소: 1
배수: 1
|
|
|
PDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
70 ns
|
5.25 V
|
4.75 V
|
85 mA
|
- 40 C
|
+ 85 C
|
DS1250AB
|
Tube
|
|
|
|
NVRAM 3.3V 4096k Nonvolatile SRAM
- DS1250W-100IND+
- Analog Devices / Maxim Integrated
-
11:
₩218,992.8
-
비재고 리드 타임 14 주
|
Mouser 부품 번호
700-DS1250W-100IND
|
Analog Devices / Maxim Integrated
|
NVRAM 3.3V 4096k Nonvolatile SRAM
|
|
비재고 리드 타임 14 주
|
|
|
₩218,992.8
|
|
|
₩218,977.2
|
|
최소: 11
배수: 11
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
100 ns
|
3.6 V
|
3 V
|
50 mA
|
- 40 C
|
+ 85 C
|
DS1250W
|
Tube
|
|
|
|
NVRAM 3.3V 4096k Nonvolatile SRAM
- DS1250WP-100+
- Analog Devices / Maxim Integrated
-
40:
₩236,074.8
-
비재고 리드 타임 14 주
|
Mouser 부품 번호
700-DS1250WP-100+
|
Analog Devices / Maxim Integrated
|
NVRAM 3.3V 4096k Nonvolatile SRAM
|
|
비재고 리드 타임 14 주
|
|
최소: 40
배수: 40
|
|
|
PowerCap Module-34
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
100 ns
|
3.6 V
|
3 V
|
50 mA
|
0 C
|
+ 70 C
|
DS1250WP
|
Tray
|
|
|
|
NVRAM 4096k Nonvolatile SRAM
- DS1250Y-100IND+
- Analog Devices / Maxim Integrated
-
11:
₩235,731.6
-
비재고 리드 타임 14 주
|
Mouser 부품 번호
700-DS1250Y-100IND
|
Analog Devices / Maxim Integrated
|
NVRAM 4096k Nonvolatile SRAM
|
|
비재고 리드 타임 14 주
|
|
|
₩235,731.6
|
|
|
₩235,716
|
|
최소: 11
배수: 11
|
|
|
EDIP-32
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
100 ns
|
5.5 V
|
4.5 V
|
85 mA
|
- 40 C
|
+ 85 C
|
DS1250Y
|
Tube
|
|
|
|
NVRAM 3.3V 4096K Nonvolatile SRAM with Battery
- DS1350WP-100+
- Analog Devices / Maxim Integrated
-
400:
₩232,112.4
-
비재고 리드 타임 17 주
|
Mouser 부품 번호
700-DS1350WP-100
|
Analog Devices / Maxim Integrated
|
NVRAM 3.3V 4096K Nonvolatile SRAM with Battery
|
|
비재고 리드 타임 17 주
|
|
최소: 400
배수: 40
|
|
|
PowerCap Module-34
|
Parallel
|
4 Mbit
|
512 k x 8
|
8 bit
|
100 ns
|
3.6 V
|
3 V
|
50 mA
|
0 C
|
+ 70 C
|
DS1350W
|
Tray
|
|