|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R024M1HXKSA1
- Infineon Technologies
-
1:
₩70,870.8
-
951재고 상태
-
720예상 2026-08-31
|
Mouser 부품 번호
726-IMYH200R024M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
951재고 상태
720예상 2026-08-31
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
89 A
|
33 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
137 nC
|
- 55 C
|
+ 150 C
|
576 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R100M1HXKSA1
- Infineon Technologies
-
1:
₩28,360.8
-
6,944재고 상태
-
10,320예상 2026-11-19
|
Mouser 부품 번호
726-IMYH200R100M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
6,944재고 상태
10,320예상 2026-11-19
|
|
|
₩28,360.8
|
|
|
₩17,565.6
|
|
|
₩16,348.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
26 A
|
131 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
55 nC
|
- 55 C
|
+ 150 C
|
217 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R050M1HXKSA1
- Infineon Technologies
-
1:
₩39,078
-
850재고 상태
-
1,920주문 중
|
Mouser 부품 번호
726-IMYH200R050M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
850재고 상태
1,920주문 중
주문 중:
480 예상 2026-09-24
1,440 예상 2026-10-15
|
|
|
₩39,078
|
|
|
₩24,897.6
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
48 A
|
64 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
348 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R075M1HXKSA1
- Infineon Technologies
-
1:
₩32,479.2
-
903재고 상태
|
Mouser 부품 번호
726-IMYH200R075M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
903재고 상태
|
|
|
₩32,479.2
|
|
|
₩20,373.6
|
|
|
₩19,718.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
34 A
|
98 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
267 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R012M1HXKSA1
- Infineon Technologies
-
1:
₩124,222.8
-
1,930주문 중
|
Mouser 부품 번호
726-IMYH200R012M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1,930주문 중
주문 중:
10 예상 2027-01-07
1,920 예상 2027-01-28
|
|
|
₩124,222.8
|
|
|
₩103,303.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
123 A
|
16.5 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
246 nC
|
- 55 C
|
+ 150 C
|
552 W
|
Enhancement
|
CoolSIC
|
|
대한민국