GaN Semiconductors

Results: 680
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS
STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1,560
Mult.: 1,560

STMicroelectronics Gate Drivers High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs Non-Stocked Lead-Time 26 Weeks
Min.: 1,560
Mult.: 1,560

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1,560
Mult.: 1,560

STMicroelectronics Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power Non-Stocked Lead-Time 52 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

STMicroelectronics Gate Drivers High voltage, high-speed half-bridge gate driver for GaN power switches Non-Stocked Lead-Time 40 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Microchip Technology RF Amplifier 2.7-3.5 GHz 70W GaN PA MMIC
Non-Stocked
Min.: 1
Mult.: 1

Texas Instruments Gate Drivers Automotive 7A and 5A single-channel gate Non-Stocked Lead-Time 26 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Texas Instruments Gate Drivers 650V 105mohm GaN hal f-bridge with integ
Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000
Texas Instruments Gate Drivers 650V 95mohm GaN half -bridge with integr Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 2,000
Texas Instruments Gate Drivers SMART 140 MOHM E-GAN FET WITH DRIVER 19-VQFN Non-Stocked Lead-Time 26 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 600-V 50-m? GaN FET with integrated driv
Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 600V 30mohm GaN FET with integrated driv Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000
Texas Instruments Gate Drivers 600V 50mohm GaN FET with integrated driv Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 650-V 30-m? GaN FET with integrated driv
Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Texas Instruments Gate Drivers 650V 25m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000
Texas Instruments Gate Drivers 650V 35m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000
Texas Instruments Gate Drivers 650V 70m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000
Texas Instruments Gate Drivers 5A/5A dual-channel g ate driver with 4V Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 5,000
EPC GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

EPC GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 2,500

Fairview Microwave RF Amplifier 43 dB Gain High Power GaN Amplifier at 10 Watt Psat Operating from 700 MHz to 6 GHz with SMA Input, SMA Output Non-Stocked
Min.: 1
Mult.: 1
Infineon Technologies GaN FETs CoolGaN Transistor 100 V G3 in WLCSP 0.9x0.9, 185 m Non-Stocked Lead-Time 22 Weeks
Min.: 4,000
Mult.: 1