HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

결과: 719
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명 포장
IXYS MOSFET Trench T2 HiperFET Power MOSFET 945재고 상태
3,510주문 중
₩36,780.1
₩25,929.3
₩23,871.8
₩23,632.3
최소: 1
배수: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,488재고 상태
₩38,612.1
₩25,295.1
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO264 150V 400A N-CH 4CLASS 1,457재고 상태
₩98,024
₩80,352.6
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,779재고 상태
₩9,286.6
₩4,918.1
₩4,354.4
₩3,903.5
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET 250V UltraJunc X3 Pwr MOSFET 602재고 상태
₩51,421.7
₩39,866.3
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,135재고 상태
₩39,330.8
₩25,887
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3,498재고 상태
₩16,036.7
₩8,962.5
₩8,257.9
₩8,159.3
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A 230재고 상태
₩26,986.2
₩17,121.8
₩14,275.2
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 70 A 40 mOhms 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 144재고 상태
₩45,052.1
₩36,061.4
₩31,171.5
₩28,846.3
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET TO247 250V 120A N-CH X3CLASS 886재고 상태
₩25,140.1
₩14,627.5
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 12 mOhms 20 V 2.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds 526재고 상태
₩23,110.9
₩13,133.7
₩13,119.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 18 A 600 mOhms 30 V 6 V 97 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 42A 0.185Ohm PolarP3 Power MOSFET 200재고 상태
₩19,531.5
₩13,288.8
₩10,794.5
₩10,625.4
₩10,498.5
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 185 mOhms 30 V 5 V 78 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET 500V 80A 168재고 상태
₩37,202.9
₩29,001.3
₩26,549.3
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms 30 V 3 V 197 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET 499재고 상태
₩19,940.2
₩11,386.3
₩10,836.7
최소: 1
배수: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFET TO264 650V 120A N-CH X2CLASS 407재고 상태
₩40,683.6
₩28,268.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 482재고 상태
30예상 2026-12-30
₩32,298.9
₩23,857.8
₩20,856.2
₩19,291.9
최소: 1
배수: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 94재고 상태
₩58,791.8
₩50,153.4
₩41,430.5
최소: 1
배수: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET 20 Amps 800V 0.52 Rds 244재고 상태
₩18,657.8
₩10,357.6
₩9,934.9
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 20 A 520 mOhms 30 V 5 V 86 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET 140 Amps 200V 0.018 Rds 284재고 상태
₩28,945
₩17,530.4
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 140 A 18 mOhms 20 V 2.5 V 240 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 140 Amps 100V 0.011 Rds 470재고 상태
₩28,691.3
₩20,222
₩16,614.5
최소: 1
배수: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 140 A 11 mOhms 20 V 5 V 155 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 149재고 상태
₩31,495.6
₩19,517.4
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 27 mOhms 20 V 3 V 150 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube

IXYS MOSFET 140 Amps 300V 0.024 Ohm Rds 507재고 상태
₩39,330.8
₩25,887
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 140 A 24 mOhms 20 V 5 V 185 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET 180 Amps 100V 6.1 Rds 1,264재고 상태
₩14,275.2
₩7,708.3
₩7,102.4
₩7,003.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET TO264 650V 102A N-CH X2CLASS 218재고 상태
₩34,469
₩21,899
최소: 1
배수: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 102 A 30 mOhms 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET PLUS247 650V 120A N-CH X2CLASS 201재고 상태
₩40,289
₩27,986.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube