HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 719
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE 1,593In Stock
₩40,560
₩26,114.4
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 170 A 6.1 mOhms 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode 1,138In Stock
₩42,744
₩27,643.2
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO264 150V 400A N-CH 4CLASS 1,497In Stock
₩108,513.6
₩87,796.8
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFETs 10 Amps 800V 1.1 Rds 8,813In Stock
₩10,280.4
₩5,444.4
₩4,726.8
₩4,321.2
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 1,138In Stock
₩43,539.6
₩28,282.8
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 72A N-CH X3CLASS 3,498In Stock
₩17,752.8
₩9,921.6
₩9,141.6
₩8,907.6
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 52A PLUS247 Power MOSFET 94In Stock
₩65,317.2
₩51,620.4
₩45,864
Min.: 1
Mult.: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs 12 Amps 1200V 1.15 Rds 1,047In Stock
720Expected 1/18/2027
₩20,607.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.35 Ohms 30 V 6.5 V 103 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFETs 1 157In Stock
₩36,441.6
₩26,660.4
₩25,303.2
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET 277In Stock
₩20,311.2
₩11,263.2
₩10,623.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A 187In Stock
₩22,807.2
₩12,792
₩12,355.2
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFETs 74 Amps 200V 0.034 Rds 503In Stock
₩13,790.4
₩8,892
₩8,034
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 74 A 34 mOhms 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode 276In Stock
₩26,379.6
₩15,038.4
₩14,913.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 94 A 36 mOhms 20 V 3 V 102 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFETs 26 Amps 1200V 246In Stock
₩69,123.6
₩50,450.4
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 26 A 500 mOhms 30 V 6.5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 1000V 0.32 Rds 265In Stock
₩48,406.8
₩31,543.2
₩31,512
₩31,480.8
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms 30 V 6.5 V 225 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 64A 357In Stock
₩20,950.8
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2 729In Stock
₩11,809.2
₩6,333.6
₩5,491.2
₩5,210.4
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 3 Amps 1200V 4.50 Rds 415In Stock
₩18,142.8
₩10,514.4
₩9,360
₩8,907.6
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 250V 240A N-CH X3CLASS 226In Stock
₩44,054.4
Min.: 1
Mult.: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 250 V 240 A 5 mOhms 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 218In Stock
₩61,354.8
₩43,492.8
Min.: 1
Mult.: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 200 V 300 A 4 mOhms 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET 249In Stock
₩28,672.8
₩16,660.8
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 95 mOhms 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube

IXYS MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET 150In Stock
₩30,139.2
₩19,843.2
₩17,550
₩16,660.8
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 78 A 68 mOhms 30 V 5 V 147 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube

IXYS MOSFETs 160 Amps 100V 6.9 Rds 356In Stock
₩14,398.8
₩8,174.4
₩7,503.6
₩7,269.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 160 A 5.8 mOhms 30 V 2.5 V 132 nC - 55 C + 175 C 430 W Enhancement HiPerFET Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET 268In Stock
₩20,904
₩11,871.6
₩11,029.2
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFETs Trench T2 HiperFET Power MOSFET 1,110In Stock
3,510On Order
₩40,716
₩28,704
₩26,426.4
₩24,960
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube