1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

결과: 20
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 패키지/케이스 장착 스타일 구성 콜렉터- 최대 이미터 전압 VCEO 콜렉터-이미터 포화 전압 최대 게이트 이미터 전압 25 C의 지속적인 컬렉터 전류 Pd - 전력 발산 최저 작동온도 최고 작동온도 시리즈 포장


STMicroelectronics IGBT Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac 591재고 상태
₩9,681.2
₩6,228.7
₩5,735.4
최소: 1
배수: 1
Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop 1200 V 50 A high-speed H series IGBT 416재고 상태
₩9,526.2
₩6,510.5
₩5,918.6
최소: 1
배수: 1
Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 416재고 상태
₩10,089.9
₩5,777.7
₩4,410.8
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed 2,258재고 상태
₩2,818.4
₩1,775.6
₩1,161.2
₩920.2
최소: 1
배수: 1
Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed 4,906재고 상태
₩3,128.4
₩1,521.9
₩1,355.7
₩1,079.4
최소: 1
배수: 1
Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 13재고 상태
1,200주문 중
₩6,383.7
₩4,185.3
₩3,114.3
₩2,607
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 533재고 상태
1,800예상 2026-12-04
₩8,004.3
₩5,242.2
₩3,861.2
₩3,424.4
₩3,043.9
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 330재고 상태
600예상 2027-02-05
₩10,907.2
₩7,299.7
₩5,862.3
₩5,214
₩4,664.5
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 445재고 상태
₩8,201.5
₩5,369.1
₩4,002.1
₩3,353.9
최소: 1
배수: 1
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l 532재고 상태
₩4,749
₩3,001.6
₩2,127.9
₩1,775.6
₩1,550.1
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long 834재고 상태
₩5,397.2
₩2,959.3
₩2,015.2
₩2,001.1
₩1,916.5
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
3,600예상 2027-02-08
₩12,809.6
₩9,018.9
₩7,299.7
₩6,482.3
₩5,805.9
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
2,390주문 중
₩8,892.1
₩5,044.9
₩4,199.4
₩3,734.4
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long 493재고 상태
₩4,692.6
₩2,550.7
₩2,071.5
₩1,719.2
₩1,592.4
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed 2,500재고 상태
컷 테이프
₩2,142
₩1,330.3
₩876.5
₩687.7
릴
₩532.7
최소: 1
배수: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 7 A high speed 비재고 리드 타임 20 주
₩2,888.9
₩1,385.2
₩1,238.7
₩979.4
최소: 1
배수: 1
Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 비재고 리드 타임 22 주
₩7,496.9
₩4,904
₩3,649.8
₩3,058
최소: 1
배수: 1
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 비재고 리드 타임 22 주
₩4,523.5
₩4,044.4
최소: 600
배수: 600
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed 비재고 리드 타임 15 주
컷 테이프
₩759.6
₩744.1
₩714.5
최소: 2,000
배수: 1,000
: 1,000
Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo 비재고 리드 타임 22 주
₩1,789.7
₩1,705.1
최소: 600
배수: 600
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube