700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

Results: 7
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Channel Mode
Maximum Operating Frequency
Minimum Operating Frequency
Technology
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
224In Stock
Cut Tape
₩15,990
₩8,892
₩7,456.8
Reel
₩7,456.8
₩6,817.2
Min.: 1
Mult.: 1
: 250
SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
155In Stock
Cut Tape
₩9,048
₩7,488
₩4,009.2
Reel
₩4,009.2
₩3,447.6
₩3,338.4
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
88In Stock
Cut Tape
₩9,718.8
₩5,132.4
₩4,321.2
Reel
₩4,321.2
₩4,227.6
View
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
15In Stock
Cut Tape
₩9,516
₩5,210.4
₩4,414.8
Reel
₩4,414.8
₩4,321.2
View
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
3In Stock
Cut Tape
₩11,824.8
₩6,349.2
₩5,257.2
Reel
₩5,257.2
₩4,711.2
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Lead-Time 18 Weeks
Cut Tape
₩5,678.4
₩2,870.4
₩2,293.2
Reel
₩2,293.2
₩1,996.8
₩1,965.6
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Non-Stocked Lead-Time 18 Weeks
Cut Tape
₩7,862.4
₩7,020
₩3,556.8
Reel
₩3,556.8
₩3,541.2
₩3,447.6
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si