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IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (KRW) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package / Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs TO263 200V 86A N-CH X4CLASS IXTA86N20X4 IXYS 1: ₩22,392.2 2,004In Stock	Mfr. Part # IXTA86N20X4 Mouser Part # 747-IXTA86N20X4	IXYS	MOSFETs TO263 200V 86A N-CH X4CLASS Learn More about IXYS ix4 ultra junction mosfets	Datasheet	2,004In Stock	₩22,392.2 ₩12,936.5 ₩12,598.2	Min.: 1 Mult.: 1			Si	SMD/SMT	TO-263-3	N-Channel	1 Channel	200 V	86 A	13 mOhms	20 V	4.5 V	70 nC	- 55 C	+ 175 C	300 W	Enhancement	Tube
	MOSFETs TO220 200V 94A N-CH X4CLASS IXTP94N20X4 IXYS 1: ₩24,646.9 719In Stock	Mfr. Part # IXTP94N20X4 Mouser Part # 747-IXTP94N20X4	IXYS	MOSFETs TO220 200V 94A N-CH X4CLASS Learn More about IXYS ix4 ultra junction mosfets	Datasheet	719In Stock	₩24,646.9 ₩16,614.5 ₩13,951.1 ₩13,641.1	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	200 V	94 A	10.6 mOhms	20 V	4.5 V	77 nC	- 55 C	+ 175 C	360 W	Enhancement	Tube
	MOSFETs 200V, 120A, Ultra junction X4, TO-247 package, MOSFET IXTH120N20X4 IXYS 1: ₩18,460.5 1,147In Stock	Mfr. Part # IXTH120N20X4 Mouser Part # 747-IXTH120N20X4	IXYS	MOSFETs 200V, 120A, Ultra junction X4, TO-247 package, MOSFET Learn More about IXYS ix4 ultra junction mosfets	Datasheet	1,147In Stock	₩18,460.5 ₩10,244.9 ₩10,230.8 ₩10,132.1 ₩9,808	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	200 V	120 A	9.5 mOhms	20 V	2.5 V	108 nC	- 55 C	+ 175 C	417 W	Enhancement	Tube
	MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET IXTP120N20X4 IXYS 1: ₩15,909.9 503In Stock	Mfr. Part # IXTP120N20X4 Mouser Part # 747-IXTP120N20X4	IXYS	MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET Learn More about IXYS ix4 ultra junction mosfets	Datasheet	503In Stock	₩15,909.9 ₩8,878 ₩8,187.5 ₩8,074.7	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	200 V	120 A	9.5 mOhms	20 V	2.5 V	108 nC	- 55 C	+ 175 C	417 W	Enhancement	Tube
	MOSFETs TO263 200V 94A N-CH X4CLASS IXTA94N20X4 IXYS 1: ₩25,816.5 620Expected 6/7/2027	Mfr. Part # IXTA94N20X4 Mouser Part # 747-IXTA94N20X4	IXYS	MOSFETs TO263 200V 94A N-CH X4CLASS Learn More about IXYS ix4 ultra junction mosfets	Datasheet	620Expected 6/7/2027	₩25,816.5 ₩17,516.4 ₩13,655.1	Min.: 1 Mult.: 1			Si	SMD/SMT	TO-263-3	N-Channel	1 Channel	200 V	94 A	10.6 mOhms	20 V	4.5 V	77 nC	- 55 C	+ 175 C	360 W	Enhancement	Tube
	MOSFETs TO220 200V 86A N-CH X4CLASS IXTP86N20X4 IXYS 1: ₩23,505.5 450Factory Stock Available	Mfr. Part # IXTP86N20X4 Mouser Part # 747-IXTP86N20X4	IXYS	MOSFETs TO220 200V 86A N-CH X4CLASS Learn More about IXYS ix4 ultra junction mosfets	Datasheet	450Factory Stock Available More Info Available	₩23,505.5 ₩17,896.8 ₩14,909.3 ₩12,598.2	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	200 V	86 A	13 mOhms	20 V	4.5 V	70 nC	- 55 C	+ 175 C	300 W	Enhancement	Tube