Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package / Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging

onsemi IGBTs 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT 245In Stock
₩11,696.4
₩6,820.5
₩6,806.4
₩5,876.4
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 20 V 80 A 600 W - 55 C + 175 C FGHL40T120RWD Tube
onsemi IGBTs 1200V, 40A Field Stop VII (FS7) Discrete IGBT Fast Switching 270In Stock
₩8,553.8
₩4,861.7
₩4,044.4
₩3,875.3
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.68 V 30 V 70 A 469 W - 55 C + 175 C FGHL40T120SWD Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE 392In Stock
₩7,637.9
₩4,312.2
₩3,551.2
₩3,325.7
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.15 V 20 V 60 A 273 W - 55 C + 175 C FGHL40T65LQDT Tube

onsemi IGBTs 650V FS4 Trench IGBT 101In Stock
₩7,666
₩4,326.2
₩3,565.3
₩3,339.8
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 100 A 268 W - 55 C + 175 C FGH50T65SQD Tube

onsemi IGBTs 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT 17In Stock
450Expected 12/29/2026
₩15,205.3
₩9,018.9
₩7,637.9
₩7,595.6
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 20 V 120 A 833 W - 55 C + 175 C FGHL60T120RWD Tube

onsemi IGBTs 650V/35A FAST IGBT FSII T 17In Stock
90Expected 11/16/2026
₩9,328.9
₩5,340.9
₩4,439
₩4,340.3
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.7 V - 20 V, 20 V 70 A 300 W - 55 C + 175 C NGTB35N65FL2 Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 450In Stock
₩7,144.6
₩4,692.6
₩3,494.8
₩2,663.4
₩2,564.7
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 650 V 1.15 V 20 V 80 A 341 W - 55 C + 175 C FGHL50T65LQDTL4 Tube