|
|
MOSFET HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
₩11,715.6
-
1,675재고 상태
|
Mouser 부품 번호
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,675재고 상태
|
|
|
₩11,715.6
|
|
|
₩7,394.4
|
|
|
₩5,772
|
|
|
₩5,522.4
|
|
|
₩5,163.6
|
|
|
₩5,163.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
₩17,050.8
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 52 주
|
|
|
₩17,050.8
|
|
|
₩11,746.8
|
|
|
₩9,594
|
|
|
₩9,032.4
|
|
|
₩8,439.6
|
|
|
₩8,439.6
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
₩12,292.8
-
1,174재고 상태
|
Mouser 부품 번호
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,174재고 상태
|
|
|
₩12,292.8
|
|
|
₩8,330.4
|
|
|
₩5,974.8
|
|
|
₩5,522.4
|
|
|
₩5,475.6
|
|
|
₩5,475.6
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
₩9,438
-
1,098재고 상태
|
Mouser 부품 번호
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,098재고 상태
|
|
|
₩9,438
|
|
|
₩6,318
|
|
|
₩4,539.6
|
|
|
₩4,134
|
|
|
₩3,853.2
|
|
|
₩3,853.2
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
₩8,299.2
-
143재고 상태
|
Mouser 부품 번호
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
143재고 상태
|
|
|
₩8,299.2
|
|
|
₩5,522.4
|
|
|
₩3,931.2
|
|
|
₩3,478.8
|
|
|
₩3,244.8
|
|
|
₩3,244.8
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
₩16,801.2
-
28재고 상태
-
2,000예상 2027-03-04
|
Mouser 부품 번호
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
28재고 상태
2,000예상 2027-03-04
|
|
|
₩16,801.2
|
|
|
₩11,731.2
|
|
|
₩9,438
|
|
|
₩8,829.6
|
|
|
₩8,252.4
|
|
|
₩8,252.4
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
₩7,035.6
-
108재고 상태
-
수명 종료
|
Mouser 부품 번호
726-IPDD60R150G7XTM1
수명 종료
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
108재고 상태
|
|
|
₩7,035.6
|
|
|
₩4,648.8
|
|
|
₩3,291.6
|
|
|
₩3,073.2
|
|
|
₩3,042
|
|
|
₩2,839.2
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
₩28,860
-
950재고 상태
-
2,000예상 2027-07-19
|
Mouser 부품 번호
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
950재고 상태
2,000예상 2027-07-19
|
|
|
₩28,860
|
|
|
₩20,498.4
|
|
|
₩17,908.8
|
|
|
₩16,723.2
|
|
|
₩16,723.2
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
₩5,865.6
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 12 주
|
|
|
₩5,865.6
|
|
|
₩3,837.6
|
|
|
₩2,683.2
|
|
|
₩2,184
|
|
|
₩2,028
|
|
|
₩2,028
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2,000:
₩3,088.8
-
비재고 리드 타임 45 주
-
NRND
|
Mouser 부품 번호
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
비재고 리드 타임 45 주
|
|
최소: 2,000
배수: 2,000
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|