600V & 1200V Trenchstop™ Performance Series IGBTs

Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs (Insulated-Gate Bipolar Transistors) combine Trench top-cell and field stop concept leads to significantly improved static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,920On Order
₩4,929.6
₩2,964
₩2,137.2
₩1,778.4
₩1,622.4
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 53 A 200 W - 40 C + 175 C Trenchstop Performance Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,200On Order
₩6,193.2
₩3,588
₩2,932.8
₩2,449.2
₩2,215.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 319.2 W - 40 C + 175 C Trenchstop IGBT3 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
₩5,694
₩3,120
₩2,542.8
₩1,950
₩1,856.4
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 67 A 246 W - 40 C + 175 C Trenchstop Performance Tube