CoolSiC™ JFET Transistors

Infineon Technologies CoolSiC™ JFET Transistors are designed to meet the growing demand for high-performance, solid-state power distribution and protection in rapidly evolving environments. These transistors deliver 750V and 1200V voltages, enabling system designers to push efficiency and reliability to the next level. The CoolSiC™ JFET transistors feature an extremely low on-resistance of 1.6mΩ which helps minimize conduction losses. These transistors offer .XT interconnection technology, which ensures improved thermal performance and high robustness under pulsed and cyclic loads. The CoolSiC™ JFET-based solid-state designs enable higher switching speeds and allow rapid fault isolation, reduce system damage risk, minimize downtime, and contribute to longer system lifetime. Typical applications include AI data centers, solid-state protection, industrial power systems, and motor soft starters, and surge protection.

결과: 4
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 구성 Vds - 드레인 소스 항복 전압 Vgs - 게이트 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Pd - 전력 발산 최저 작동온도 최고 작동온도 포장
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK
150주문 중
최소: 1
배수: 1
: 750

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 598 A 6.5 mOhms 2.38 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK
150주문 중
최소: 1
배수: 1
: 750

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 522 A 7.3 mOhms 2.142 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK
150주문 중
최소: 1
배수: 1
: 750

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 289 A 14.3 mOhms 1.127 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK
150주문 중
최소: 1
배수: 1
: 750

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 238 A 17.5 mOhms 931 W - 55 C + 175 C Reel, Cut Tape