RGSX5TS65 650V 75A Field Stop Trench IGBTs

ROHM Semiconductor RGSX5TS65 650V 75A Field Stop Trench IGBTs feature a low collector-emitter saturation voltage. The RGSX5TS65 has a short circuit withstand time of 8μs. It's qualified to AEC-Q101 and has Pb-free lead plating.

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Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
ROHM Semiconductor IGBTs 8 s Short-Circuit Tolerance, 650V 75A, Automotive Field Stop Trench IGBT
Datasheet
427In Stock
₩14,500.7
₩8,567.9
₩7,257.4
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Min.: 1
Mult.: 1
Si TO-247N-3 Through Hole Single 650 V 2.15 V 30 V 114 A 404 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
Datasheet
450In Stock
₩16,896.3
₩10,104
₩8,708.9
Min.: 1
Mult.: 1
Si TO-247N-3 Through Hole Single 650 V 2.15 V 30 V 114 A 404 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Field Stop Trench IGBT
Datasheet
438In Stock
₩15,557.6
₩9,244.4
₩7,849.2
View
Min.: 1
Mult.: 1
Si TO-247N-3 Through Hole Single 650 V 2.15 V 30 V 114 A 404 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
Datasheet
400In Stock
₩17,882.7
₩10,752.2
₩9,385.3
Min.: 1
Mult.: 1
Si TO-247N-3 Through Hole Single 650 V 2.15 V 30 V 114 A 404 W - 40 C + 175 C Tube