|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
₩30,227.3
-
957재고 상태
-
2,160주문 중
|
Mouser 부품 번호
726-IMZC120R017M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
957재고 상태
2,160주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
₩22,293.5
-
530재고 상태
-
2,160주문 중
|
Mouser 부품 번호
726-IMZC120R026M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
530재고 상태
2,160주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
₩17,530.4
-
1,519재고 상태
-
240주문 중
|
Mouser 부품 번호
726-IMZC120R040M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,519재고 상태
240주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
₩14,557
-
374재고 상태
-
480예상 2026-12-14
|
Mouser 부품 번호
726-IMZC120R053M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
374재고 상태
480예상 2026-12-14
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
₩40,345.4
-
53재고 상태
-
3,360주문 중
|
Mouser 부품 번호
726-IMZC120R012M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
53재고 상태
3,360주문 중
주문 중:
240 예상 2026-12-03
240 예상 2026-12-11
1,440 예상 2027-01-07
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
₩18,037.8
-
22재고 상태
-
1,440주문 중
|
Mouser 부품 번호
726-IMZC120R034M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
22재고 상태
1,440주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
₩26,817.1
-
2,710주문 중
|
Mouser 부품 번호
726-IMZC120R022M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
2,710주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
₩12,978.7
-
2,860주문 중
|
Mouser 부품 번호
726-IMZC120R078M2HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
2,860주문 중
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|