|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
₩28,906.8
-
1,552재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R022M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,552재고 상태
|
|
|
₩28,906.8
|
|
|
₩19,905.6
|
|
|
₩17,191.2
|
|
|
₩16,021.2
|
|
|
₩15,272.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
₩41,542.8
-
496재고 상태
-
240예상 2027-05-27
-
신제품
|
Mouser 부품 번호
726-IMZC120R012M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
496재고 상태
240예상 2027-05-27
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
₩32,572.8
-
599재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R017M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
599재고 상태
|
|
최소: 1
배수: 1
최대: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
₩24,024
-
451재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R026M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
451재고 상태
|
|
|
₩24,024
|
|
|
₩17,035.2
|
|
|
₩14,445.6
|
|
|
₩12,698.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
₩19,562.4
-
981재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R034M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
981재고 상태
|
|
|
₩19,562.4
|
|
|
₩11,746.8
|
|
|
₩10,108.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
₩15,849.6
-
707재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R053M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
707재고 상태
|
|
|
₩15,849.6
|
|
|
₩9,344.4
|
|
|
₩7,909.2
|
|
|
₩7,893.6
|
|
|
₩7,675.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
₩18,626.4
-
1,992주문 중
-
신제품
|
Mouser 부품 번호
726-IMZC120R040M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,992주문 중
|
|
|
₩18,626.4
|
|
|
₩11,122.8
|
|
|
₩9,484.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
₩15,085.2
-
480예상 2026-08-24
-
신제품
|
Mouser 부품 번호
726-IMZC120R078M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480예상 2026-08-24
|
|
|
₩15,085.2
|
|
|
₩9,890.4
|
|
|
₩8,252.4
|
|
|
₩6,817.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
대한민국