MXP120 MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120 MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 288W (Tc = 25°C) and continuous drain current of 10.5A to 53A (Tc = 25°C). The MXP120 MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247AD 3L, TO-247AD 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET 800In Stock
₩19,078.8
₩13,806
₩11,497.2
₩10,561.2
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 11/25/2026
₩20,124
₩14,710.8
₩12,776.4
₩11,076
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 11/25/2026
₩19,936.8
₩14,570.4
₩12,667.2
₩10,982.4
₩10,779.6
Min.: 1
Mult.: 1
Through Hole TO-247AD-3 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 4/14/2027
₩15,912
₩11,247.6
₩9,360
₩8,346
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
599Expected 4/14/2027
₩17,253.6
₩11,044.8
₩9,594
₩8,626.8
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 4/14/2027
₩14,492.4
₩9,906
₩8,158.8
₩7,269.6
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
583Expected 4/14/2027
₩15,818.4
₩9,890.4
₩8,533.2
₩7,612.8
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 4/14/2027
₩16,754.4
₩9,313.2
₩8,595.6
₩7,332
₩7,316.4
Min.: 1
Mult.: 1
Through Hole TO-247AD-4L 1 Channel 1.2 kV 18 A 200 mOhms - 10 V, + 22 V 3.1 V 25 nC - 55 C + 175 C 109 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 4/14/2027
Cut Tape
₩13,197.6
₩7,160.4
₩6,583.2
₩5,335.2
Reel
₩5,257.2
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 12 A 313 mOhms - 10 V, + 22 V 3 V 15 nC - 55 C + 175 C 85 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 4/14/2027
₩24,741.6
₩14,289.6
₩13,291.2
₩11,996.4
₩11,980.8
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 12/2/2026
₩19,437.6
₩14,476.8
₩12,058.8
₩10,748.4
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 12/7/2026
₩20,763.6
₩15,256.8
₩13,306.8
₩11,512.8
₩11,310
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 12/9/2026
Cut Tape
₩17,893.2
₩9,999.6
₩9,625.2
₩7,862.4
Reel
₩7,846.8
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, + 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 12/7/2026
₩17,799.6
₩11,559.6
₩10,046.4
₩9,048
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 12/2/2026
Cut Tape
₩16,395.6
₩9,094.8
₩8,595.6
₩7,020
Reel
₩7,020
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, + 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 12/9/2026
₩16,192.8
₩10,296
₩8,938.8
₩7,893.6
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 4/14/2027
₩25,708.8
₩14,898
₩13,868.4
₩12,604.8
₩12,589.2
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement