MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

결과: 142
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명 포장
STMicroelectronics MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH 2,355재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 800 V 5 A 1.15 Ohms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 42 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a D2PAK package 1,266재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 900 V 15 A 330 mOhms - 20 V, 20 V 3 V 29.7 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package 1,439재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.05 kV 4 A 1.4 Ohms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP ultra na 1,726재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 12 A 370 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-CH 950V 0.41Ohm typ. 12A MDmesh K5 1,386재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 12 A 410 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 250 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package 706재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2 Ohms - 30 V, 30 V 3 V 13.7 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected 3,878재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 3.5 A 2 Ohms - 30 V, 30 V 4 V 12.5 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 800V 3.7Ohm typ 2A Zener-protected 5,313재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 800 V 2 A 3.7 Ohms - 30 V, 30 V 4 V 3 nC - 55 C + 150 C 30 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected 1,574재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 8 A 800 mOhms - 30 V, 30 V 4 V 22 nC - 55 C + 150 C 130 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an IPAK package 5,721재고 상태
최소: 1
배수: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 1.05 kV 1.5 A 8 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 950V .275Ohm 17.5A Zener-protect 599재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 17.5 A 330 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A 647재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 14 A 300 mOhms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 800V 2.1Ohm typ 2.5A Zener-protecte 6,000재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 800 V 2.5 A 2.5 Ohms - 30 V, 30 V 4 V 10.5 nC - 55 C + 150 C 38 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 950V 0.41Ohm typ. 12A MDmesh K5 884재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 12 A 410 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 250 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package 1,395재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 20 A 210 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 1,385재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 18.5 A 299 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 250 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package 2,662재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 5 A 1.15 Ohms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 85 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 2,625재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 17.5 A 330 mOhms - 30 V, 30 V 3 V 48 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 1,723재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 18.5 A 299 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 40 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 914재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 19.5 A 260 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube

STMicroelectronics MOSFET Automotive N-channel 40 V, 1.35 mOhm typ., 120 A, STripFET F7 Power MOSFET in a 3,312재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT N-Channel 1 Channel 40 V 120 A 1.6 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 175 C 150 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 900 V, 0.088 Ohm typ., 40 A MDmesh K5 Power MOSFET in a TO-247 package 400재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 40 A 88 mOhms - 30 V, 30 V 3 V 89 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package 1,587재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 6 A 910 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package 1,335재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 7 A 720 mOhms - 30 V, 30 V 3 V 17.7 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package 1,800재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 8 A 680 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube