IGBT7 Discretes

Infineon Technologies IGBT7 디스크리트는 마이크로 패턴 트렌치 기술로 제작된 7세대 TRENCHSTOP™IGBT입니다. 이 첨단 기술은 탁월한 제어 및 성능을 제공하여 애플리케이션에서 상당한 손실 감소, 효율성 향상 및 전력 밀도 증가를 가져옵니다.

결과: 44
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 패키지/케이스 장착 스타일 구성 콜렉터- 최대 이미터 전압 VCEO 콜렉터-이미터 포화 전압 최대 게이트 이미터 전압 25 C의 지속적인 컬렉터 전류 Pd - 전력 발산 최저 작동온도 최고 작동온도 시리즈 포장
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 381재고 상태
₩6,973.2
₩6,021.6
₩5,990.4
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 1,097재고 상태
₩20,061.6
₩12,074.4
₩10,717.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package 1,815재고 상태
₩10,670.4
₩6,099.6
₩5,085.6
₩4,648.8
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package 317재고 상태
₩9,422.4
₩5,007.6
₩4,118.4
₩3,931.2
최소: 1
배수: 1
Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 253재고 상태
₩11,200.8
₩7,300.8
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube


Infineon Technologies IGBT 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package 1,661재고 상태
₩12,308.4
₩7,519.2
₩6,318
₩6,021.6
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 428 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 680재고 상태
₩18,782.4
₩11,232
₩9,703.2
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT7 S7 in TO247PLUS-3pin package 1,430재고 상태
₩13,868.4
₩10,311.6
₩9,391.2
₩9,157.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package 303재고 상태
₩15,771.6
₩11,154
₩9,625.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBT 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package 432재고 상태
₩8,361.6
₩4,882.8
₩3,931.2
₩3,541.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package 825재고 상태
₩13,150.8
₩8,346
₩7,035.6
₩6,848.4
최소: 1
배수: 1
IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 385재고 상태
480예상 2026-12-10
₩19,390.8
₩12,542.4
₩11,325.6
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package 318재고 상태
₩16,036.8
₩10,389.6
₩8,502
₩8,018.4
최소: 1
배수: 1
Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 145재고 상태
240예상 2027-09-23
₩19,375.2
₩11,934
₩11,091.6
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package 138재고 상태
₩15,194.4
₩9,391.2
₩7,909.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 151재고 상태
720주문 중
₩16,177.2
₩9,562.8
₩9,547.2
₩8,080.8
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package 203재고 상태
240예상 2026-12-03
₩11,622
₩6,957.6
₩5,834.4
₩5,475.6
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package 202재고 상태
₩9,063.6
₩5,444.4
₩4,524
₩3,993.6
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package 157재고 상태
₩14,180.4
₩8,923.2
₩8,814
₩7,425.6
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package 97재고 상태
₩10,202.4
₩5,896.8
₩4,929.6
₩4,477.2
최소: 1
배수: 1
Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package 177재고 상태
₩11,887.2
₩6,848.4
₩5,740.8
₩5,382
최소: 1
배수: 1
- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 30 A IGBT with anti-parallel diode in TO-247 package 3,186재고 상태
720예상 2026-10-20
₩7,737.6
₩4,290
₩3,541.2
₩3,182.4
₩2,792.4
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 60 A 188 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247 package 764재고 상태
₩8,658
₩5,319.6
₩4,118.4
₩3,385.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 76 A 230.8 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247 package 834재고 상태
₩10,888.8
₩6,240
₩5,210.4
₩5,194.8
₩4,789.2
최소: 1
배수: 1
Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 333 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 377재고 상태
₩18,174
₩13,509.6
₩11,980.8
₩10,296
최소: 1
배수: 1
Si IGBT7 H7 Tube