|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
₩60,855.6
-
1,043재고 상태
-
1,000예상 2026-09-03
|
Mouser 부품 번호
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,043재고 상태
1,000예상 2026-09-03
|
|
|
₩60,855.6
|
|
|
₩47,112
|
|
|
₩47,112
|
|
최소: 1
배수: 1
최대: 10
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
₩32,791.2
-
3,280재고 상태
|
Mouser 부품 번호
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,280재고 상태
|
|
|
₩32,791.2
|
|
|
₩23,431.2
|
|
|
₩19,312.8
|
|
|
₩18,985.2
|
|
|
₩17,815.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
₩43,914
-
558재고 상태
-
1,000예상 2026-09-03
|
Mouser 부품 번호
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
558재고 상태
1,000예상 2026-09-03
|
|
|
₩43,914
|
|
|
₩33,898.8
|
|
|
₩28,220.4
|
|
|
₩27,768
|
|
|
₩22,464
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
₩25,240.8
-
365재고 상태
|
Mouser 부품 번호
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
365재고 상태
|
|
|
₩25,240.8
|
|
|
₩17,799.6
|
|
|
₩15,256.8
|
|
|
₩14,430
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
₩23,368.8
-
1,673재고 상태
|
Mouser 부품 번호
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,673재고 상태
|
|
|
₩23,368.8
|
|
|
₩17,082
|
|
|
₩17,082
|
|
최소: 1
배수: 1
최대: 60
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
₩16,894.8
-
316재고 상태
|
Mouser 부품 번호
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316재고 상태
|
|
|
₩16,894.8
|
|
|
₩11,653.2
|
|
|
₩9,048
|
|
|
₩8,564.4
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
₩11,278.8
-
616재고 상태
|
Mouser 부품 번호
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
616재고 상태
|
|
|
₩11,278.8
|
|
|
₩7,222.8
|
|
|
₩5,694
|
|
|
₩5,038.8
|
|
|
₩4,586.4
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
₩9,016.8
-
1,650재고 상태
|
Mouser 부품 번호
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,650재고 상태
|
|
|
₩9,016.8
|
|
|
₩6,021.6
|
|
|
₩4,305.6
|
|
|
₩3,931.2
|
|
|
₩3,712.8
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
₩8,143.2
-
6,004재고 상태
|
Mouser 부품 번호
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6,004재고 상태
|
|
|
₩8,143.2
|
|
|
₩5,413.2
|
|
|
₩3,853.2
|
|
|
₩3,432
|
|
|
₩3,416.4
|
|
|
₩3,229.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
₩13,634.4
-
66재고 상태
-
2,000주문 중
|
Mouser 부품 번호
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
66재고 상태
2,000주문 중
|
|
|
₩13,634.4
|
|
|
₩9,188.4
|
|
|
₩7,066.8
|
|
|
₩5,974.8
|
|
|
₩5,616
|
|
|
₩5,600.4
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
₩15,553.2
-
1,968예상 2026-07-28
|
Mouser 부품 번호
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,968예상 2026-07-28
|
|
|
₩15,553.2
|
|
|
₩10,296
|
|
|
₩8,252.4
|
|
|
₩7,160.4
|
|
|
₩6,723.6
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|