|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
₩54,451.5
-
1,563재고 상태
-
1,000주문 중
|
Mouser 부품 번호
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,563재고 상태
1,000주문 중
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
₩39,147.6
-
2,011재고 상태
|
Mouser 부품 번호
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,011재고 상태
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
₩25,097.9
-
235재고 상태
|
Mouser 부품 번호
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
235재고 상태
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
₩19,066.5
-
1,593재고 상태
|
Mouser 부품 번호
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,593재고 상태
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
₩7,426.5
-
3,601재고 상태
-
2,000주문 중
|
Mouser 부품 번호
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,601재고 상태
2,000주문 중
|
|
최소: 1
배수: 1
최대: 1,000
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
₩16,079
-
79재고 상태
-
1,000예상 2026-12-17
|
Mouser 부품 번호
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
79재고 상태
1,000예상 2026-12-17
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
₩13,218.3
-
250재고 상태
-
1,000예상 2026-11-19
|
Mouser 부품 번호
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
250재고 상태
1,000예상 2026-11-19
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
₩11,569.5
-
227재고 상태
-
2,000예상 2026-12-03
|
Mouser 부품 번호
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
227재고 상태
2,000예상 2026-12-03
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
₩9,103.4
-
182재고 상태
-
4,000주문 중
|
Mouser 부품 번호
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
182재고 상태
4,000주문 중
주문 중:
2,000 예상 2027-05-13
2,000 예상 2027-06-24
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
₩28,634.9
-
1,999예상 2026-11-19
|
Mouser 부품 번호
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,999예상 2026-11-19
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
₩10,061.7
-
2,000예상 2026-12-03
|
Mouser 부품 번호
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,000예상 2026-12-03
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|