SiC MOSFETs C3M™ in TOLL Package

Wolfspeed SiC MOSFETs C3M™ in the TOLL Package offer a much lower on-state resistance temperature dependence than standard silicon MOSFETs. The MOSFETs feature superior switching speeds and low conduction loss, which is critical to achieving high efficiency at high power for next-generation power supplies. The SiC MOSFETs are optimized for high-performance power electronics applications, including enterprise, server, and telecom power supplies, electric vehicle charging, energy storage, and battery management systems.

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Wolfspeed SiC MOSFETs SiC, MOSFET, 45mO, 650V, TOLL, T&R, Industrial
Datasheet
1,723In Stock
Cut Tape
₩15,078.4
₩8,370.6
₩7,947.9
₩7,933.8
₩7,412.4
Reel
₩7,412.4
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 650 V 49 A 60 mOhms - 8 V, + 19 V 3.6 V 59 nC - 40 C + 175 C 164 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 60mO, 650V, TOLL,T&R, Industrial
Datasheet
1,125In Stock
Cut Tape
₩13,584.7
₩7,468.8
₩6,933.3
₩6,468.2
Reel
₩6,468.2
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 650 V 39 A 79 mOhms - 8 V, + 19 V 3.6 V 46 nC - 40 C + 175 C 131 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 160mO, 1200V, TO-263-7, Industrial
Datasheet
852In Stock
₩11,005.9
₩5,932.7
₩5,425.4
₩4,904
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 17 A 208 mOhms - 8 V, + 19 V 3.6 V 24 nC - 55 C + 150 C 90 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 25mO, 650V, TOLL, T&R, Industrial
Datasheet
762In Stock
Cut Tape
₩19,982.5
₩11,470.9
₩10,709.9
Reel
₩10,709.9
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-8 1 Channel 650 V 77 A 25 mOhms - 8 V, + 19 V 2.3 V 111 nC - 40 C + 175 C 326 W Enhancement