Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename

onsemi SiC MOSFETs SIC MOS TO247-3L 650V 625In Stock
₩12,443.2
₩8,243.8
₩7,609.7
₩7,553.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-4L 70MOHM 1200V M3 217In Stock
₩24,562.4
₩14,176.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 64.8 mOhms - 8 V, + 22 V 3.37 V 47.9 nC - 55 C + 175 C 163 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 650V 312In Stock
Cut Tape
₩17,290.9
₩9,737.6
₩9,498
₩8,990.7
Reel
₩8,990.7
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 650V 497In Stock
₩14,289.3
₩9,483.9
₩8,934.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 202In Stock
₩40,542.7
₩28,465.8
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 650V 2,232In Stock
Cut Tape
₩45,869.5
₩36,723.8
₩31,763.4
₩30,072.3
Reel
₩28,099.4
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 70MOHM 1200V M3 329In Stock
1,350On Order
₩13,429.7
₩7,553.3
₩6,947.4
₩6,031.4
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 37 A 91 mOhms - 10 V, + 22 V 4.4 V 49 nC - 55 C + 175 C 252 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS 60MOHM 900V 330In Stock
Cut Tape
₩18,728.3
₩12,020.5
₩11,372.2
Reel
₩11,372.2
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 70MOHM 1200V M3 13In Stock
450Expected 2/9/2027
₩15,261.6
₩9,188
₩7,454.7
₩6,806.4
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 37 A 91 mOhms - 10 V, + 22 V 4.4 V 49 nC - 55 C + 175 C 252 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TOLL 650V Non-Stocked Lead-Time 52 Weeks
Cut Tape
₩19,193.3
₩14,613.4
₩12,175.5
₩10,850.8
₩9,216.2
Reel
₩9,216.2
Min.: 1
Mult.: 1
: 2,000
SMD/SMT PSOF-8 1 Channel 650 V 73 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 348 W Enhancement EliteSiC