SiCPAK™ F/G 1200V High-Power Modules

GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Series Packaging
GeneSiC Semiconductor MOSFET Modules 1200V 5mohm Half-Bridge SiCPAK G SiC Module 96In Stock
₩392,462.2
₩392,405.8
₩392,363.6
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 5mohm Half-Bridge SiCPAK G SiC Module, TIM 84In Stock
₩413,980.7
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module 95In Stock
₩355,301.6
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module, TIM 94In Stock
₩414,459.8
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module 95In Stock
₩354,766.1
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM 94In Stock
₩413,727
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Half-Bridge SiCPAK F SiC Module 52In Stock
₩196,414.3
₩196,372
₩192,849
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM 94In Stock
₩207,166.5
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 17mohm Half-Bridge SiCPAK F SiC Module 94In Stock
₩143,653.8
₩143,583.4
₩113,863.4
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM 94In Stock
₩150,897.1
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 18mohm Full-Bridge SiCPAK F SiC Module 95In Stock
₩196,315.7
₩196,273.4
₩159,479.2
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM 96In Stock
₩205,433.2
Min.: 1
Mult.: 1
SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray