QPD0020TR7

Qorvo
772-QPD0020TR7
QPD0020TR7

Mfr.:

Description:
GaN FETs DC-6GHz 35W 50V GaN Transistor

Datasheet:
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Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
QFN-20
Brand: Qorvo
Configuration: Single
Development Kit: QPD0020EVB02
Gain: 16.7 dB
Maximum Operating Frequency: 2.69 GHz
Minimum Operating Frequency: 2.62 GHz
Output Power: 34.7 W
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Series: QPD0020
Factory Pack Quantity: 500
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Part # Aliases: QPD0020
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Attributes selected: 0

Datasheet

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Compliance Codes
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
500
Expected 8/18/2026
Factory Lead-Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₩-
Ext. Price:
₩-
Est. Tariff:
This Product Ships FREE

Pricing (KRW)

Qty. Unit Price
Ext. Price
₩93,475.2 ₩93,475
₩77,204.4 ₩772,044
₩73,148.4 ₩1,828,710
₩72,228 ₩7,222,800
₩72,212.4 ₩18,053,100
Full Reel (Order in multiples of 500)
₩69,201.6 ₩34,600,800

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