SiC MOSFETs – Mouser Korea, Republic of

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CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Rds On - Drain-Source Resistance

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Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

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Part #

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R018CM2HXKSA1
Infineon Technologies
1: ₩28,392
188In Stock
New Product

Mfr. Part #
IMY120R018CM2HXKSA1

Mouser Part #
726-IMY120R018CM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

188In Stock

₩28,392

₩16,598.4

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

1 Channel

1.2 kV

80 A

23 mOhms

- 10 V, + 25 V

5.1 V

73 nC

- 40 C

+ 175 C

356 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R036AM2HXKSA1
Infineon Technologies
1: ₩20,420.4
215In Stock
New Product

Mfr. Part #
IMY120R036AM2HXKSA1

Mouser Part #
726-IMY120R036AM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

215In Stock

₩20,420.4

₩11,325.6

₩10,826.4

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

1 Channel

1.2 kV

44 A

45 mOhms

- 10 V, + 25 V

5.1 V

37 nC

- 40 C

+ 175 C

171 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

IMZC120R007M2HXKSA1
Infineon Technologies
1: ₩64,646.4
188In Stock
960On Order
New Product

Mfr. Part #
IMZC120R007M2HXKSA1

Mouser Part #
726-IMZC120R007M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Learn More

Datasheet

188In Stock

960On Order

₩64,646.4

₩48,063.6

₩45,848.4

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U07

1 Channel

1.2 kV

201 A

20 mOhms

- 10 V, + 25 V

5.1 V

176 nC

- 55 C

+ 175 C

711 W

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R036CM2HXKSA1
Infineon Technologies
1: ₩20,030.4
172In Stock
New Product

Mfr. Part #
IMY120R036CM2HXKSA1

Mouser Part #
726-IMY120R036CM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

172In Stock

₩20,030.4

₩11,091.6

₩10,561.2

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

1 Channel

1.2 kV

44 A

45 mOhms

- 10 V, + 25 V

5.1 V

37 nC

- 40 C

+ 175 C

250 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

IMCQ120R017M2HXTMA1
Infineon Technologies
1: ₩30,685.2
1,453In Stock
New Product

Mfr. Part #
IMCQ120R017M2HXTMA1

Mouser Part #
726-IMCQ120R017M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Learn More

Datasheet

1,453In Stock

Cut Tape

₩30,685.2

₩21,481.2

₩19,453.2

₩18,158.4

Reel

₩18,158.4

Min.: 1
Mult.: 1

: 750

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R012M2HHXUMA1
Infineon Technologies
1: ₩67,563.6
556In Stock
New Product

Mfr. Part #
IMSQ120R012M2HHXUMA1

Mouser Part #
726-IMSQ120R012M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

556In Stock

Cut Tape

₩67,563.6

₩52,447.2

₩49,654.8

Reel

₩49,654.8

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

IMCQ120R007M2HXTMA1
Infineon Technologies
1: ₩66,081.6
118In Stock
5,250On Order
New Product

Mfr. Part #
IMCQ120R007M2HXTMA1

Mouser Part #
726-IMCQ120R007M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Learn More

Datasheet

118In Stock

5,250On Order

Cut Tape

₩66,081.6

₩53,929.2

₩47,642.4

₩45,115.2

Reel

₩45,115.2

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22

1.2 kV

257 A

7.5 mOhms

4.2 V

+ 175 C

- 55 C

1.172 kW

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

IMCQ120R010M2HXTMA1
Infineon Technologies
1: ₩50,668.8
573In Stock
3,000Expected 11/19/2026
New Product

Mfr. Part #
IMCQ120R010M2HXTMA1

Mouser Part #
726-IMCQ120R010M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Learn More

Datasheet

573In Stock

3,000Expected 11/19/2026

Cut Tape

₩50,668.8

₩39,858

₩35,084.4

₩31,449.6

Reel

₩31,449.6

Min.: 1
Mult.: 1

: 750

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R026M2HXTMA1
Infineon Technologies
1: ₩22,339.2
1,754In Stock
New Product

Mfr. Part #
IMCQ120R026M2HXTMA1

Mouser Part #
726-IMCQ120R026M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

1,754In Stock

Cut Tape

₩22,339.2

₩12,854.4

₩12,604.8

Reel

₩12,168

MouseReel Available

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

1 Channel

1.2 kV

82 A

67 mOhms

- 10 V, + 25 V

5.1 V

63.4 nC

- 55 C

+ 175 C

405 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R034M2HXTMA1
Infineon Technologies
1: ₩18,782.4
1,111In Stock
750On Order
New Product

Mfr. Part #
IMCQ120R034M2HXTMA1

Mouser Part #
726-IMCQ120R034M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

1,111In Stock

750On Order

Cut Tape

₩18,782.4

₩12,480

₩11,325.6

₩9,812.4

Reel

₩9,547.2

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

1 Channel

1.2 kV

64 A

89 mOhms

- 10 V, + 25 C

5.1 V

48.7 nC

- 55 C

+ 175 C

326 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R040M2HXTMA1
Infineon Technologies
1: ₩17,581.2
941In Stock
New Product

Mfr. Part #
IMCQ120R040M2HXTMA1

Mouser Part #
726-IMCQ120R040M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

941In Stock

Cut Tape

₩17,581.2

₩9,812.4

₩9,422.4

₩8,907.6

Reel

₩8,907.6

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

1 Channel

1.2 kV

56 A

104 mOhms

- 10 V, + 25 V

5.1 V

42.4 nC

- 55 C

+ 175 C

288 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R078M2HXTMA1
Infineon Technologies
1: ₩13,353.6
2,299In Stock
New Product

Mfr. Part #
IMCQ120R078M2HXTMA1

Mouser Part #
726-IMCQ120R078M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

2,299In Stock

Cut Tape

₩13,353.6

₩7,441.2

₩6,832.8

₩6,739.2

Reel

₩5,943.6

Quote

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

1 Channel

1.2 kV

31 A

205 mOhms

- 10 V, + 25 V

5.1 V

23.2 nC

- 55 C

+ 175 C

176 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

IMZA120R022M2HXKSA1
Infineon Technologies
1: ₩26,894.4
277In Stock
New Product

Mfr. Part #
IMZA120R022M2HXKSA1

Mouser Part #
726-IMZA120R022M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

Learn More

Datasheet

277In Stock

₩26,894.4

₩15,475.2

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U02

1 Channel

1.2 kV

80 A

29 mOhms

- 10 V, + 25 V

5.1 V

71 nC

- 55 C

+ 175 C

329 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2

IMZC120R012M2HXKSA1
Infineon Technologies
1: ₩41,542.8
235In Stock
960On Order
New Product

Mfr. Part #
IMZC120R012M2HXKSA1

Mouser Part #
726-IMZC120R012M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2

Learn More

Datasheet

235In Stock

960On Order

₩41,542.8

₩26,988

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

129 A

12 mOhms

- 10 V, + 25 V

5.1 V

124 nC

- 55 C

+ 175 C

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2

IMZC120R017M2HXKSA1
Infineon Technologies
1: ₩32,572.8
384In Stock
720On Order
New Product

Mfr. Part #
IMZC120R017M2HXKSA1

Mouser Part #
726-IMZC120R017M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2

Learn More

Datasheet

384In Stock

720On Order

₩32,572.8

₩23,524.8

₩20,436

₩19,515.6

Quote

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

97 A

17 mOhms

- 10 V, + 25 V

5.1 V

89 nC

- 55 C

+ 175 C

382 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2

IMZC120R022M2HXKSA1
Infineon Technologies
1: ₩28,906.8
1,335In Stock
New Product

Mfr. Part #
IMZC120R022M2HXKSA1

Mouser Part #
726-IMZC120R022M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2

Learn More

Datasheet

1,335In Stock

₩28,906.8

₩19,905.6

₩17,191.2

₩16,021.2

₩15,272.4

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

80 A

22 mOhms

- 10 V, + 25 V

5.1 V

71 nC

- 55 C

+ 175 C

329 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2

IMZC120R034M2HXKSA1
Infineon Technologies
1: ₩19,562.4
699In Stock
240Expected 10/1/2026
New Product

Mfr. Part #
IMZC120R034M2HXKSA1

Mouser Part #
726-IMZC120R034M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2

Learn More

Datasheet

699In Stock

240Expected 10/1/2026

₩19,562.4

₩10,810.8

₩10,233.6

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

55 A

- 10 V, + 25 V

5.1 V

45 nC

- 55 C

+ 175 C

244 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2

IMZC120R053M2HXKSA1
Infineon Technologies
1: ₩15,849.6
632In Stock
New Product

Mfr. Part #
IMZC120R053M2HXKSA1

Mouser Part #
726-IMZC120R053M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2

Learn More

Datasheet

632In Stock

₩15,849.6

₩8,564.4

₩7,909.2

₩7,768.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

38 A

53 mOhms

- 10 V, + 25 V

5.1 V

30 nC

- 55 C

+ 175 C

182 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

IMBG120R008M2HXTMA1
Infineon Technologies
1: ₩56,799.6
740In Stock
2,000On Order

Mfr. Part #
IMBG120R008M2HXTMA1

Mouser Part #
726-IMBG120R008M2HXT

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Learn More

Datasheet

740In Stock

2,000On Order

Cut Tape

₩56,799.6

₩42,244.8

₩42,229.2

₩40,014

Reel

₩40,014

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

1 Channel

1.2 kV

189 A

7.7 mOhms

- 7 V, + 20 V

5.1 V

195 nC

- 55 C

+ 175 C

800 W

Enhancement

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R053M2HXTMA1
Infineon Technologies
1: ₩14,757.6
324In Stock
750Expected 11/5/2026
New Product

Mfr. Part #
IMCQ120R053M2HXTMA1

Mouser Part #
726-IMCQ120R053M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

324In Stock

750Expected 11/5/2026

Cut Tape

₩14,757.6

₩8,096.4

₩7,488

₩7,066.8

Reel

₩7,066.8

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

1 Channel

1.2 kV

43 A

138 mOhms

- 10 V, + 25 V

5.1 V

32.8 nC

- 55 C

+ 175 C

234 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R026M2HHXUMA1
Infineon Technologies
1: ₩37,252.8
692In Stock
New Product

Mfr. Part #
IMSQ120R026M2HHXUMA1

Mouser Part #
726-IMSQ120R026M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

692In Stock

Cut Tape

₩37,252.8

₩24,819.6

₩23,493.6

Reel

₩23,493.6

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R040M2HHXUMA1
Infineon Technologies
1: ₩29,515.2
430In Stock
New Product

Mfr. Part #
IMSQ120R040M2HHXUMA1

Mouser Part #
726-IMSQ120R040M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

430In Stock

Cut Tape

₩29,515.2

₩18,439.2

₩17,893.2

Reel

₩17,206.8

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

IMZA120R017M2HXKSA1
Infineon Technologies
1: ₩32,042.4
47In Stock
480On Order
New Product

Mfr. Part #
IMZA120R017M2HXKSA1

Mouser Part #
726-IMZA120R017M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

Learn More

Datasheet

47In Stock

480On Order

₩32,042.4

₩21,606

₩19,266

₩18,860.4

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U02

1 Channel

1.2 kV

97 A

23 mOhms

- 10 V, + 25 V

5.1 V

89 nC

- 55 C

+ 175 C

382 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2

IMZC120R026M2HXKSA1
Infineon Technologies
1: ₩24,024
86In Stock
960On Order
New Product

Mfr. Part #
IMZC120R026M2HXKSA1

Mouser Part #
726-IMZC120R026M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2

Learn More

Datasheet

86In Stock

960On Order

₩24,024

₩15,740.4

₩14,445.6

₩13,353.6

₩12,870

Min.: 1
Mult.: 1

Through Hole

TO-247-4

1 Channel

1.2 kV

69 A

25 mOhms

- 10 V, + 25 V

5.1 V

124 nC

- 55 C

+ 175 C

289 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

IMBG120R012M2HXTMA1
Infineon Technologies
1: ₩42,354
177In Stock
2,000On Order

Mfr. Part #
IMBG120R012M2HXTMA1

Mouser Part #
726-IMBG120R012M2HXT

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Learn More

Datasheet

177In Stock

2,000On Order

Cut Tape

₩42,354

₩29,718

₩28,532.4

₩27,674.4

Reel

₩25,584

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

1 Channel

1.2 kV

144 A

12.2 mOhms

- 7 V, + 20 V

5.1 V

124 nC

- 55 C

+ 175 C

600 W

Enhancement

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

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8.1 A
14.9 A
21.2 A
28 A
29 A
31 A
38 A
41 A
43 A
44 A
48 A
52 A
55 A
56 A
64 A
69 A
75 A
80 A
82 A
87 A

7.5 mOhms
7.7 mOhms
10.4 mOhms
12 mOhms
12.2 mOhms
13.6 mOhms
16 mOhms
17 mOhms
17.1 mOhms
20 mOhms
21.6 mOhms
22 mOhms
23 mOhms
25 mOhms
25.4 mOhms
29 mOhms
34 mOhms
39.6 mOhms
40 mOhms
45 mOhms

7.9 nC
8.1 nC
9.7 nC
14.4 nC
20.6 nC
21 nC
23.2 nC
30 nC
32.8 nC
37 nC
39 nC
42.4 nC
45 nC
48.7 nC
60 nC
63.4 nC
71 nC
73 nC
89 nC
124 nC

80 W
94 W
123 W
143 W
158 W
171 W
176 W
182 W
205 W
218 W
234 W
244 W
250 W
288 W
289 W
326 W
329 W
335 W
356 W
382 W