STGWA75H65DFB2

STMicroelectronics
511-STGWA75H65DFB2
STGWA75H65DFB2

Mfr.:

Description:
IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
115 A
375 W
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6.100 g
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Attributes selected: 0

Compliance Codes
KRHTS:
8541299000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STGWA75H65DFB2 HB2 IGBT

STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 75A.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

In Stock: 384

Stock:
384 Can Ship Immediately
Factory Lead-Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₩-
Ext. Price:
₩-
Est. Tariff:

Pricing (KRW)

Qty. Unit Price
Ext. Price
₩9,001.2 ₩9,001
₩5,896.8 ₩58,968
₩4,352.4 ₩435,240
₩3,447.6 ₩2,068,560

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