PSC20120x Silicon Carbide (SiC) Schottky Diodes

Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes are designed for ultra-high performance, low-loss, high-efficiency power conversion applications. The devices feature temperature-independent capacitive turn-off, zero recovery switching behavior, and an excellent figure-of-merit (QC x VF).

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Vr - Reverse Voltage
Packaging
Nexperia SiC Schottky Diodes PSC20120J/SOT8018/TO263-2L
Datasheet
655In Stock
Cut Tape
₩10,436.4
₩5,538
₩5,054.4
₩4,352.4
Reel
₩4,352.4
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-2 Single 20 A 1.2 kV 1.5 V 710 A 1 uA - 55 C + 175 C 1.2 kV Reel, Cut Tape
Nexperia SiC Schottky Diodes PSC20120L/SOT8022/TO247-2L
Datasheet
450Expected 8/6/2027
₩11,606.4
₩6,224.4
₩5,023.2
Min.: 1
Mult.: 1
Through Hole TO-247-2 Single 20 A 1.2 kV 1.5 V 710 A 1 uA - 55 C + 175 C 1.2 kV