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|
GaN FET 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on).
EPC EPC2370
- EPC2370
- EPC
-
1:
₩11,637.6
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2370-ES
신제품
|
EPC
|
GaN FET 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on).
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|
|
|
GaN FET 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters.
EPC EPC2371
- EPC2371
- EPC
-
1:
₩9,172.8
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2371-ES
신제품
|
EPC
|
GaN FET 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters.
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|
|
|
GaN FET 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification.
EPC EPC2372
- EPC2372
- EPC
-
3,000:
₩4,414.8
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2372-ES
신제품
|
EPC
|
GaN FET 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification.
|
|
재고 없음
|
|
최소: 3,000
배수: 1
|
|
|
|
|
GaN FET 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems.
EPC EPC2373
- EPC2373
- EPC
-
1:
₩8,361.6
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2373-ES
신제품
|
EPC
|
GaN FET 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems.
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|
|
|
GaN FET Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification.
EPC EPC2374
- EPC2374
- EPC
-
3,000:
₩4,851.6
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2374-ES
신제품
|
EPC
|
GaN FET Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification.
|
|
재고 없음
|
|
최소: 3,000
배수: 1
|
|
|
|
|
GaN FET Enhancement-mode eGaN power transistor for high-frequency power conversion applications.
EPC EPC2375
- EPC2375
- EPC
-
1:
₩10,358.4
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2375
신제품
|
EPC
|
GaN FET Enhancement-mode eGaN power transistor for high-frequency power conversion applications.
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|
|
|
GaN FET Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification.
EPC EPC2376
- EPC2376
- EPC
-
3,000:
₩8,330.4
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2376
신제품
|
EPC
|
GaN FET Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification.
|
|
재고 없음
|
|
최소: 3,000
배수: 1
|
|
|
|
|
GaN FET 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification.
EPC EPC2377
- EPC2377
- EPC
-
1:
₩10,545.6
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2377
신제품
|
EPC
|
GaN FET 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification.
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|
|
|
GaN FET 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification.
EPC EPC2378
- EPC2378
- EPC
-
1:
₩10,530
-
재고 없음
-
신제품
|
Mouser 부품 번호
65-EPC2378
신제품
|
EPC
|
GaN FET 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification.
|
|
재고 없음
|
|
최소: 1
배수: 1
|
|
|