Power MOSFETs 디스크리트 반도체

이산 반도체의 유형

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결과: 31
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS 제품 유형 장착 스타일 패키지/케이스
IXYS SiC MOSFET 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L 384재고 상태
최소: 1
배수: 1

SiC MOSFETS Through Hole TO-247-3L
IXYS SiC MOSFET 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L 438재고 상태
최소: 1
배수: 1

SiC MOSFETS Through Hole TO-247-3L
IXYS SiC MOSFET 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L 460재고 상태
최소: 1
배수: 1

SiC MOSFETS Through Hole TO-247-3L
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 420재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L 375재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 439재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 410재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 1,000재고 상태
최소: 1
배수: 1
: 1,000
SiC MOSFETS SMD/SMT TO-263-7LA
ROHM Semiconductor SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET 1,000재고 상태
최소: 1
배수: 1
: 1,000
SiC MOSFETS SMD/SMT TO-263-7LA
ROHM Semiconductor SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 442재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 427재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET 1200V, 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET 1,000재고 상태
최소: 1
배수: 1
: 1,000
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 447재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L
ROHM Semiconductor SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 1,000재고 상태
최소: 1
배수: 1
: 1,000
SiC MOSFETS SMD/SMT TO-263-7LA
ROHM Semiconductor SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 1,000재고 상태
최소: 1
배수: 1
: 1,000
SiC MOSFETS SMD/SMT TO-263-7LA
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 443재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450재고 상태
최소: 1
배수: 1
SiC MOSFETS Through Hole TO-247-4L